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Part: IXBH15N160
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 1600V High Voltage BimosFET Monolithic Bipolar MOS Transistor
Company: IXYS Corporation
Datasheet: Download IXBH15N160 datasheet File size : 373 kB
Request For quote: Find where to buy IXBH15N160
Datasheet text preview:
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBH 15N140 IXBH 15N160
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 15 A 5.8 V typ. 40 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 15N140 15N160 1400 1400 1600 1600 ±20 ±30 15 9 18 ICM = 18 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C
Features · International standard package JEDEC TO-247 AD · High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) · Monolithic construction - high blocking voltage capability - very fast turn-off characteristics · MOS Gate turn-on - drive simplicity · Reverse conducting capability
VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8·VCES Clamped inductive load, L = 100 mH TC = 25°C
Applications · · · · Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies · CRT deflection · Lamp ballasts
1.6 mm (0.063 in) from case for 10 s Mounting torque
300
1.15/10 Nm/lb.in. 6 g
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15N140 15N160 TJ = 25°C TJ = 1 2 5°C 1400 1600 4 0.1 ± 500 5.8 7.7 7.0 8 100 V V V mA mA nA V V
Advantages · Easy to mount with 1 screw (isolated mounting screw hole) · Space savings · High power density
BVCES VGE(th) IC E S IG E S VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 1 mA, VCE = VGE
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
TJ = 1 2 5°C
© 2000 IXYS All rights reserved
1-4
918
IXBH 15N140 IXBH 15N160
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 9 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 47 W 80 11 45 200 60 180 40 pF pF pF nC ns ns ns ns 0.83 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD Outline
Cies Coes Cres Qg td ( o n ) tr i td ( o f f ) tf i RthJC RthCK
Reverse Conduction
Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions min. typ. 3.8 max. 5 V
E F G H J K L M N
Symbol VF
IF = IC90, VGE = 0 V
1.5 2.49
© 2000 IXYS All rights reserved
2-4
IXBH 15N140 IXBH 15N160
70
TJ = 25°C
VGE = 17V 15V
70
TJ = 125°C
VGE = 17V 15V
60
60
IC - Amperes
IC - Amperes
50 40 30 20 10 0 0 2 4 6 8
13V
50 40 30 20 10 0
13V
10 12 14 16 18 20
0
2
4
6
8 10 12 14 16 18 20 22
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
60
VCE = 20V
Fig. 2 Typ. Output Characteristics
30 25
50
IC - Amperes
IF - Amperes
40 30
TJ = 125°C TJ = 25°C
20 15 10 5
TJ = 125°C TJ = 25°C
20 10 0 5 6 7 8 9 10 11 12 13
0
0
1
2
3
4
5
6
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
100
16 14 12
VCE = 600V IC = 9A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 10 20 30 40 50
10
TJ = 125°C VCEK < VCES
1
IXBH 15N140 IXBH 15N160
0.1 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Biased Safe Operating Area RBSOA
© 2000 IXYS All rights reserved
3-4
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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