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Part: IXBH16N170
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> BIMOSFET
Description: 1700V High Voltage, High Gain BimosFET Monolithic Bipolar MOS Transistor
Company: IXYS Corporation
Datasheet: Download IXBH16N170 datasheet File size : 373 kB
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Datasheet text preview:
Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170 IXBT 16N170
VCES = 1700 V = 25 A IC25 VCE(sat) = 3.3 V
Symbol VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 25 16 40 I CM = 40 VCES = 1350 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C
TO-268 (IXBT)
G E
TO-247 AD (IXBH)
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268
Features · High Blocking Voltage · JEDEC TO-268 surface and JEDEC TO-247 AD · Low conduction losses · High current handling capability · MOS Gate turn-on - drive simplicity · Molding epoxies meet UL 94 V-0 flammability classification
1.13/10 Nm/lb.in. 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V V
Applications · AC motor speed control · Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode power supplies · Capacitor discharge circuits Advantages · High power density · Suitable for surface mounting · Easy to mount with 1 screw, (isolated mounting screw hole)
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
5 50 1.5 ±100 3.3
VCE = 0.8 VCES V GE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
TJ = 125°C
2.9
IXYS reserves the right to change limits, test conditions, and dimensions.
98657 (9/99)
© 2000 IXYS All rights reserved
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IXBH 16N170 IXBT 16N170
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 11 14 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 83 31 69 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 24 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 33 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 33 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 35 25 600 1110 12 35 28 2.0 660 1600 15 1000 1600 16 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W (TO-247) 0.25 K/W TO-268AA (D3 PAK)
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.3 24 360 V A ns
Dim. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25 A, VGE = 0 V, -diF/dt = 50 A/us = 100A
Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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