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Part: IXBH16N170A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 1700V High Voltage, High Gain BimosFET Monolithic Bipolar MOS Transistor
Company: IXYS Corporation
Datasheet: Download IXBH16N170A datasheet File size : 373 kB
Request For quote: Find where to buy IXBH16N170A
Datasheet text preview:
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
I X B H 16N170A I X B T 16N170A
Preliminary Data Sheet
VCES IC25 VCE(sat) tfi(typ)
= 1700 = 16 = 6.0 = 50
V A V ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 non repetitive TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 190 -55 ... +150 150 -55 ... +150 300 260 6 4 V V V V A A A A V µs W °C °C °C °C °C g g
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
M H
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268
onolithic fast reverse diode igh Blocking Voltage J EDEC TO-268 surface mount and JEDEC TO-247 AD packages L ow switching losses igh current handling capability OS Gate turn-on - drive simplicity M olding epoxies meet UL 94 V-0 flammability classification
M H
1.13/10Nm/lb.in.
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 125°C 5.5 50 1.5 ±100 6.0 TJ = 125°C 5.0 V V µA mA nA V V
Applications
A
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V; Note 1 VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Note 2
C motor speed control ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies C apacitor discharge circuits
U
Advantages
L
ower conduction losses than MOSFETs igh power density S uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
H
© 2003 IXYS All rights reserved
DS98707A(01/03)
I X B H 16N170A I X B T 16N170A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 8 12.5 1400 VCE = 25 V, VGE = 0 V, f = 1 MHz 90 31 65 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 22 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 15 25 160 50 1.2 15 28 2.0 220 150 2.6 250 100 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns
e
Dim.
2.5 m J ns ns mJ ns ns mJ 0.65 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5.0 10 360 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = IC90, VGE = 0 V, -diF/dt = 50 A/us = 100V
Min Recommended Footprint
Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t 300 µs, duty cycle 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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