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Part: IXBH40N160
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: High Voltage BimosFET (tm) Monolithic Bipolar MOS Transistor: 1600v, 33a
Company: IXYS Corporation
Datasheet: Download IXBH40N160 datasheet File size : 373 kB
Request For quote: Find where to buy IXBH40N160
Datasheet text preview:
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBH 40N140 IXBH 40N160
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 33 A 6.2 V typ. 40 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 40N140 40N160 1400 1400 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C
Features · International standard package JEDEC TO-247 AD · High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) · Monolithic construction - high blocking voltage capability - very fast turn-off characteristics · MOS Gate turn-on - drive simplicity · Intrinsic diode Applications · · · · · AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies · CRT deflection · Lamp ballasts Advantages
VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8·VCES Clamped inductive load, L = 100 mH TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
300
1.15/10 Nm/lb.in. 6 g
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40N140 40N160 1400 1600 4 TJ = 25°C TJ = 125°C 8 400 3 ± 500 6.2 TJ = 125°C 7.1 7.8 V V V mA mA nA V V
BVCES VGE(th) IC E S IG E S VCE(sat)
IC IC
= 1 mA, VGE = 0 V = 2 mA, VCE = VGE
· Easy to mount with 1 screw (isolated mounting screw hole) · Space savings · High power density
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
031
IXBH 40N140 IXBH 40N160
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 960 V, RG = 22 W 220 30 130 200 60 270 40 pF pF pF nC ns ns ns ns 0.35 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD Outline
Cies Coes Cres Qg td ( o n ) tr i td ( o f f ) tf i RthJC RthCK
Reverse Conduction
Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions min. typ. 2.5 max. 5 V
E F G H J K L M N
Symbol VF
IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5 2.49
© 2000 IXYS All rights reserved
2-4
IXBH 40N140 IXBH 40N160
70
TJ = 25°C
VGE = 17V 15V
70
TJ = 125°C
VGE = 17V 15V
60
60
IC - Amperes
IC - Amperes
50 40 30 20 10 0 0 2 4 6 8 10 12 14
13V
50 40 30 20 10 0
13V
16
18
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Typ. Output Characteristics
70
VCE = 20V
Fig. 2 Typ. Output Characteristics
70 60
60
IC - Amperes
IF - Amperes
50 40
TJ = 125°C TJ = 25°C
50 40 30
TJ = 25°C TJ = 125°C
30 20 10 0 5 6 7 8 9 10 11 12 13
20 10 0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGE - Volts
VF - Volts
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Characteristics of Reverse Conduction
100
16 14 12
VCE = 600V IC = 20A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 20 40 60 80 100 120 140
10
TJ = 125°C VCEK < VCES
1
IXBH 40N140 IXBH 40N160
0.1 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Typ. Gate Charge characteristics
Fig. 6 Reverse Based Safe Operating Area RBSOA
© 2000 IXYS All rights reserved
3-4
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