|
Details, datasheet, quote on part number:IXBH42N170
| |
| Part: | IXBH42N170 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 1700V High Voltage, High Gain BimosFET Monolithic Bipolar MOS Transistor |
| Company: | IXYS Corporation |
| Datasheet: | Download IXBH42N170 datasheet File size : 51 kB |
| Request For quote: | Find where to buy IXBH42N170
|
| |
Datasheet text preview:
Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 42N170 IXBT 42N170
VCES = 1700 V = 75 A IC25 VCE(sat) = 3.3 V
Symbol VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 W non repetitive TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 75 42 180 ICM = VCES = 90 1350 10 300 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V ms W °C °C °C °C °C g g
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268
1.13/10 Nm/lb.in. 6 4
Features · High Blocking Voltage · JEDEC TO-268 surface and JEDEC TO-247 AD · Low conduction losses · High current handling capability · MOS Gate turn-on - drive simplicity · Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 750 mA, VCE = VGE
5.5 50 1.5 ±100 3.3
Applications · AC motor speed control · Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode power supplies · Capacitor discharge circuits Advantages · Lower conduction losses than MOSFETs · High power density · Suitable for surface mounting · Easy to mount with 1 screw, (isolated mounting screw hole)
VCE = 0.8 VCES V GE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
TJ = 125°C
2.9
IXYS reserves the right to change limits, test conditions, and dimensions.
98710 (03/29/00)
© 2000 IXYS All rights reserved
1-2
IXBH 42N170 IXBT 42N170
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 40 4700 VCE = 25 V, VGE = 0 V, f = 1 MHz 213 76 169 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 52 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 45 35 400 1500 36 45 38 50 560 1900 45 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W (TO-247) 0.25 K/W TO-268AA (D3 PAK)
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4.0 24 360 V A ns
Dim. Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V
Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
|
|
