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Details, datasheet, quote on part number:IXBH5N160G
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Datasheet text preview:
Advanced Technical Information
High Voltage B I M O S F E T TM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G IXBH 5N160 G
I C25 VCES VCE(sat) tf
TO-220 AB
G C E
= 5.7 A = 1600 V = 4.9 V = 70 ns
C
C (TAB)
G
TO-247 AD
E
G C E C (TAB)
A = Anode, C = Cathode , TAB = Cathode
IGBT Symbol V CES V GES IC25 IC90 ICM VCEK Ptot Symbol TC = 25°C TC = 90°C VGE = 10/0 V; RG = 47 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Conditions Conditions TVJ = 25°C to 150°C Maximum Ratings 1600 ± 20 5.7 3.5 6 0 . 8 V CES 68 V V A A A W
Features · High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability · industry standard package - TO-220AB - TO-247AD epoxy meets UL94V-0 Applications · switched mode power supplies · DC-DC converters · resonant converters · lamp ballasts · laser generators, x ray generators
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 4.9 5.6 3.5 0.05 500 140 200 120 70 325 26 6 7.2 5.5 0.15 V V V mA mA nA ns ns ns ns pF nC V 1.85 K/W
VCE(sat) VGE(th) I CES IG E S td(on) tr td(off) tf C ies QGon VF RthJC
IC = 3 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.3 mA; VGE = VCE VGE = 0 V; VCE = VCES; TVJ = 25°C VCE = 0.8VCES; TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 960 V; IC = 3 A VGE = 10/0 V; RG = 47 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 10 V; IC = 3 A (reverse conduction); IF = 3 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
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IXBP 5N160 G IXBH 5N160 G
Component Symbol TV J Tstg MD mounting torque (TO-220) (TO-247) Conditions Maximum Ratings -55...+150 -55...+125 0.6 1.2 °C °C Nm Nm TO-220 AB Dimensions
Symbol RthCH Weight
Conditions with heatsink compound (TO-220) (TO-247)
Characteristic Values min. typ. max. 0.25 2 6 K/W g g
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-247 AD
Dim. A B C D* E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031
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0.102
© 2003 IXYS All rights reserved
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