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Details, datasheet, quote on part number:IXBH6N170
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Datasheet text preview:
Advanced Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic Bipolar MOS Transistor
I X B H 6N170 I X B T 6N170
VCES = 1700 V = 12 A IC25 VCE(sat) = 3.6 V
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 12 6 24 ICM = 16 V CES = 1 3 5 0 75 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A V W °C °C °C °C °C
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
H J
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268
1.13/10Nm/lb.in. 6 4 g g
igh Blocking Voltage EDEC TO-268 surface a n d JEDEC TO-247 AD L ow conduction losses igh current handling capability OS Gate turn-on - drive simplicity M olding epoxies meet UL 94 V-0 flammability classification
M H
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25°C TJ = 125°C 6 10 100 ±100 TJ = 125°C 3.0 3.3 3.6 V V µA µA nA V V
Applications
A
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
C motor speed control ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies C apacitor discharge circuits
U
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages
H S
igh power density uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS99004(02/03)
I X B H 6N170 I X B T 6N170
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 4 330 VCE = 25 V, VGE = 0 V, f = 1 MHz 23 6 20 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 3.6 8 25 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 18 600 1110 4 25 Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 120 20 0.7 660 1600 5 1000 1600 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns
e
Dim.
6 mJ ns ns mJ ns ns mJ 1.65 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 6 360 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 6 A, VGE = 0 V, -diF/dt = 50 A/us = 100A
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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