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Details, datasheet, quote on part number:IXBJ40N160
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| Part: | IXBJ40N160 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | High Voltage BimosFET(tm) Monolithic Bipolar MOS Transistor: 1600v, 33a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXBJ40N160 datasheet File size : 64 kB |
| Request For quote: | Find where to buy IXBJ40N160
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Datasheet text preview:
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IXBJ 40N140 IXBJ 40N160
VCES IC25 VCE(sat) tfi
= = = =
1400/1600 V 33 A 7.1 V 40 ns
C G
E
Symbol
T e s t Conditions
M a x i m u m Ratings 40N140 40N160 1600 1600 ±20 ±30 33 20 40 ICM = 40 350 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C
l
TO-268
G C E
V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W; VCE = 0.8 VCES Clamped inductive load, L = 100 mH TC = 25°C
1400 1400
C (TAB)
G = Gate C = Collector E = Emitter TAB = Collector
Features
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1.6 mm (0.063 in) from case for 10 s Mounting torque
300
1.15/10 Nm/lb.in. 6 g
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Leaded TO-268 package High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) Monolithic construction - high blocking voltage capability - very fast turn-off characteristics MOS Gate turn-on - drive simplicity Intrinsic diode
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40N140 40N160 1400 1600 4 TJ = 25°C TJ = 125°C 8 400 3 ± 500 6.2 TJ = 125°C 7.1 7.8 V V V mA mA nA V V
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B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 1 mA, VGE = 0 V = 2 mA, VCE = VGE
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VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies CRT deflection Lamp ballasts
Advantages
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Space savings High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98662 (10/99)
© 2000 IXYS All rights reserved
1-4
IXBJ 40N140 IXBJ 40N160
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VCE = 600 V, VGE = 15 V Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 960 V, RG = 22 W 220 30 130 200 60 270 40 pF pF pF nC ns ns ns ns 0.35 K/W 0.25 K/W
Dim.
Leaded TO-268
C ies Coes C res Qg td(on) t ri td(off) t fi RthJC RthCK
All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
Inches Min Max .193 .106 .045 .075 .016 .057 .201 .114 .057 .083 .026 .063 Millimeters Min Max 4.90 2.70 1.15 1.90 .040 1.45 5.10 2.90 1.45 2.10 .065 1.60
A A1 b b2
Reverse Conduction
Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions min. typ. 2.5 max. 5 V
C C2 D D1 E E1 e H L L1 L2
Symbol VF
IF = IC90, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %
.543 .551 .488 .500 .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 .800 .091 .045
13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15
1.395 34.67 35.43
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXBJ 40N140 IXBJ 40N160
70
TJ = 25°C
VGE = 17V 15V
70
TJ = 125°C
VGE = 17V 15V
60
60
IC - Amperes
IC - Amperes
50 40 30 20 10 0 0 2 4 6 8 10 12 14
13V
50 40 30 20 10 0
13V
16
18
0
2
4
6
8
10
12
14
16
18
VCE - Volts
VCE - Volts
Fig. 1 Output Characteristics
Fig. 2 High Temperature Output Chacteristics
70
VCE = 20V
70 60
60
IC - Amperes
IF - Amperes
50 40
TJ = 125°C TJ = 25°C
50 40 30
TJ = 25°C TJ = 125°C
30 20 10 0 5 6 7 8 9 10 11 12 13
20 10 0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGE - Volts
VF - Volts
Fig. 3 Transfer Characteristics
Fig. 4 Forward voltage drop of the Intrinsic Diode
100
16 14 12
VCE = 600V IC = 20A
ICM - Amperes
VGE - Volts
10 8 6 4 2 0 0 20 40 60 80 100 120 140
10
TJ = 125°C VCEK < VCES
1
IXBH 40N140 IXBH 40N160
0.1 0 400 800 1200 1600
QG - nanocoulombs
VCE - Volts
Fig. 5 Gate Charge Characteristics
Fig. 6 Reverse Based Safe Operating Area
© 2000 IXYS All rights reserved
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