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Details, datasheet, quote on part number:IXBN42N170A
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Datasheet text preview:
Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor
I X B N 42N170A
VCES IC25 VCE(sat) tfi
= 1700 V = 42 A = 6.0 V = 5 0 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 10 non repetitive TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 42 21 120 ICM = VCES = 90 1350 10 312 -55 ... +150 150 -55 ... +150 V V V V A A A A V µs W °C °C °C
miniBLOC, SOT-227 B (IXBN) E153432
E G
E C
G = Gate E = Emitter
C = Collector
Either Source terminal at miniBLOC can be used as Main or Kelvin Emitter
Features
H F
igh Blocking Voltage ast switching
H
Mounting torque Terminal connection torque (M4)
1.5/13 N m / l b . i n . 1.5/13 N m / l b . i n . 30 g
igh current handling capability OS Gate turn-on - drive simplicity I solation voltage 2500V
M
Applications
A
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25°C TJ = 125°C 5.5 50 1.5 ±100 TJ = 125°C 4.5 5.0 6.0 V V µA mA nA V V
C motor speed control ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies S ubstitutes for high voltage MOSFETs
U
Advantages
L
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 750 µA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
ower conduction losses than MOSFETs igh power density E asy to mount with 2 screws S pace saving
H
© 2002 IXYS All rights reserved
98933 (7/02)
I X B N 42N170A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15 24 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 45 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 55 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 25 35 230 50 2.8 25 38 5.0 300 120 6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.4 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5.0 15 330 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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