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Details, datasheet, quote on part number:IXDP35N60B
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| Part: | IXDP35N60B |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts |
| Description: | Igbt With Optional Diode: High Speed, Low Saturation Voltage |
| Company: | IXYS Corporation |
| Datasheet: | Download IXDP35N60B datasheet File size : 104 kB |
| Request For quote: | Find where to buy IXDP35N60B
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Datasheet text preview:
IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 35N60 B VC E S = 600 V = 60 A IXDH 35N60 B IC25 IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
C G G
C
TO-247 AD
IXDH ...
E IXDH 35N60 B IXDP 35N60 B
E IXDH 35N60 BD1
G C E
C (TAB)
Symbol VCES VCGR VGES VGEM IC 2 5 IC 9 0 ICM RBSOA tSC (SCSOA) PC TJ Tstg
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 10 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 10 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 600 600 ±20 ±30 60 35 70 ICM = 110 VCEK < VCES 10 250 80 -55 ... +150 -55 ... +150 300 0.4 - 0.6 0.8 - 1.2 6 V V V V A A A A µs W W °C °C °C Nm Nm g
TO-220 AB
IXDP ...
G C E
C (TAB)
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Features
q q q q q q
q q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Symbol Conditions Mounting torque TO-220 TO-247
q
NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package
Advantages
q q
Space savings High power density
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3 TJ = 25°C TJ = 125°C 1 5 V V
Typical Applications
q q q
V (BR)CES VGE(th) IC E S IG E S VCE(sat)
VGE = 0 V IC = 0.7 mA, VCE = VGE
q q
VCE = VCES VCE = 0 V, VGE = ± 20 V IC = 35 A, VGE = 15 V
0.1 mA mA ± 500 nA
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
2.2
2.7
V
021
© 2000 IXYS All rights reserved
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IXDP 35N60 B
IXDH 35N60 B IXDH 35N60 BD1
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1600 pF pF pF nC ns ns ns ns mJ mJ 0.5 K/W
TO-247 AD Outline
Cies Coes Cres Qg td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthCH RthCH TO 247 Package with heatsink compound TO 220 Package with heatsink compound Inductive load, TJ = 125°C IC = 35 A, VGE = ±15 V, VCE = 300 V, RG = 10 W IC = 35 A, VGE = 15 V, VCE = 480 V VCE = 25 V, VGE = 0 V, f = 1 MHz
150 90 120 30 45 320 70 1.6 0.8
Dim.
0.25 0.5
K/W K/W
Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr t rr RthJC Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.1 1.6 2.4 V V A A A ns ns 1.6 K/W
IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 15 A, -diF/dt = 400 A/µs, VR = 300 V VGE = 0 V, TJ = 125°C IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
45 25 13 90 40
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-220 AB Outline
Dim. A B C D E F G H J K M N Q R
Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
© 2000 IXYS All rights reserved
2-4
IXDP 35N60 B
IXDH 35N60 B IXDH 35N60 BD1
80
A 70 IC
VGE= 17V 15V 13V
80
11V 9V
A 70 IC 60 50 40 30 20 10
VGE= 17V 15V 13V
11V
9V
60 50 40 30 20 10 0 0 1 2 3 4 5 6 VCE
TJ = 25°C
TJ = 125°C
0
7V
0
1
2
3
4
5
VCE
6
7V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
A 70 IC
80 70 A IF 60 50 40 30
TJ = 125°C TJ = 25°C
60 50 40 30 20
TJ = 125°C TJ = 25°C VCE = 20V
20 10 0
10 0 3 4 5 6
7
VGE
8
9 V 10
0
1
2 VF
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
30
trr
15
V
120
ns trr
12
VGE
25 A
IRM
20 9 15 6 10 3 0 0 20 40 60 80 100 120 nC QG
VCE = 480V IC = 30A IRM
80
40
TJ = 125°C VR = 300V IF = 15A
IXDx35N60B
5 0 0 200 400
600 8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
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