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Details, datasheet, quote on part number:IXDR30N120D1
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Datasheet text preview:
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability Square RBSOA
IXDR 30N120 D1 VCES IC25 IXDR 30N120
VCE(sat) typ
= 1200 V = 50 A = 2.4 V
C G G
C
ISOPLUS 247TM E153432
G C E
E
E
Isolated Backside* G = Gate C = Collector E = Emitter
IXDR 30N120
IXDR 30N120 D1
*Patent pending
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 mH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ±20 ±30 50 30 60 ICM = 50 VCEK < VCES 10 200 95 -55 ... +150 -55 ... +150 V V V V A A A A µs W W °C °C V~ 6 g
Features · NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode Epoxy meets UL 94V-0 Isolated and UL registered E153432
q q
Advantages · · · · · DCB Isolated mounting tab Meets TO-247AD package Outline Package for clip or spring mounting Space savings High power density
50/60 Hz, RMS IISOL £ 1 mA
2500
Typical Applications · · · · · AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 2.5 6.5 V V
V(BR)CES VGE(th) I CES IG E S VCE(sat)
VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES
1.5 mA mA ± 500 n A
VCE = 0 V, VGE = ± 20 V IC = 30 A, VGE = 15 V 2.4
2.9
V
031
© 2000 IXYS All rights reserved
1-4
IXDR 30N120 D1 IXDR 30N120
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1650 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 30 A, VGE = 15 V, VCE = 0.5 VCES 250 110 120 100 Inductive load, TJ = 125°C IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 W 70 500 70 4.6 3.4 pF pF pF nC ns ns ns ns mJ mJ 0.6 K/W Package with heatsink compound 0.25 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
C ies Coes C res Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH
Reverse Diode (FRED) Symbol VF IF IRM t rr t rr RthJC Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 2.0 2.7 V V A A A ns ns 1.3 K/W
IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V, TJ = 125°C IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
50 27 20 200 40
© 2000 IXYS All rights reserved
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IXDR 30N120 D1 IXDR 30N120
60
TJ = 25°C VGE=17V 15V 13V 11V
60
TJ = 125°C
VGE=17V 15V 13V
A 50 IC
A0 5 IC 40
40 30 20
9V
11V
30 20 10 0 0.0
9V
10 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
60
A 50 IC
VCE = 20V TJ = 25°C
80 A0 7 IF 60 50 40 30 20
TJ = 25°C TJ = 125°C
40 30 20 10 0 5 6 7 8 9 10
VGE
10 0
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
60
A IRM
trr
20 V VCE = 600V
IC = 25A
300
ns trr
VGE 15
40
200
10 20 5
TJ = 125°C VR = 600V IF = 30A
IRM
100
0 0 20 40 60 80 100 120 140 nC QG
0 0 200 400
IXDH/..R30N120
600 8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
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