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Part: IXDT30N120AU1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> High Voltage 1200 Volts <
Description: High Voltage Igbt With Diode Short Circuit Soa Capability
Company: IXYS Corporation
Datasheet: Download IXDT30N120AU1 datasheet File size : 373 kB
Request For quote: Find where to buy IXDT30N120AU1
Datasheet text preview:
High Voltage IGBT with Diode
Shor t Circuit SOA Capability
Preliminary Data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 Clamped inductive load, L = 30 µH VGE = 15 V, VCE = VCES, TJ = 125°C RG = 47 , non repetitive TC = 25°C IGBT
IXDH 30N120AU1 IXDT 30N120AU1
V CES = 1200 V IC25 = 50 A VCE(sat) typ = 2.5 V
Maximum Ratings 1200 1200 ± 20 ± 30 50 31 100 ICM = 50 @ VCES 10 V V V V A A A A µs
TO-247 AD (IXDH)
C (TAB) G C E
TO-268 AA (IXDT)
G E C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
300 -55 ... +150 150 -55 ... +150
W °C °C °C Features
q q q
1.1/10 Nm/lb.in. 6 300 g °C
q q
Square RBSOA International standard package Low VCE(sat) - for minimum on-state conduction losses Low package inductance Fast Recovery Epitaxial Diode - short trr and IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4 5.5 0.9 2 6.5 1.1 ± 500 2,5 3 V V mA mA nA V
q q q q
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA, VGE = 0 V = 1 mA, VCE = VGE
q
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = VCES, VGE = 0 V TJ = 25°C VCE = 0.8 · VCES, VGE = 0 V TJ = 125°C VCE = 0 V, VGE = ±20 V IC = 25 A, VGE = 15 V
Advantages
q q q
Space savings High power density Surface mountable, high power packager
IXYS reserves the right to change limits, test conditions and dimensions.
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© 1998 IXYS All rights reserved
823
IXDH 30N120AU1 IXDT 30N120AU1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1650 VCE = 25 V, VGE = 0 V, f = 1 MHz 250 110 TBD IC = 25 A, VGE = 15 V, VCE = 0.5 VCES TBD TBD Inductive load, TJ = 125°C ° IC = 25 A, VGE = 15 V, VCE = 0.5 VCES, Ron/off = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.5 · VCES, higher TJ or increased RG 75 65 400 50 3.7 2.4 150 130 600 100 pF pF pF nC nC nC ns ns ns ns mJ mJ 0.42 K/W 0.25 K/W
Dim.
e P
TO-247 AD Outline
Cies Coes Cres Qg Qge Qgc td(on) tr i td(off) tfi Eon Eoff RthJC RthCK
B1
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
Reverse Diode (FRED) Symbol VF IRM trr Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.1 12 2.6 15 V A
TO-268 AA Outline
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IF = 25 A, VGE = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = 25 A, VGE = 0 V, -diF/dt = 200 A/µs VR = 600 V TJ = 100°C IF = 25 A, VGE = 0 V, -diF/dt = 200 A/µs TJ = 100°C VR = 600 V IF = 1 A; -di/dt = 200 A/µs; VR = 30 V TJ = 25°C
200 40 60
ns ns
RthJC
1 K/W
IXYS MOSFETs and IGBTsrights reserved following U.S.patents: © 1998 IXYS All are covered by one of the
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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