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Part: IXFH75N10Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET(tm) Power MOSFET Q-class: 100v, 75a
Company: IXYS Corporation
Datasheet: Download IXFH75N10Q datasheet File size : 711 kB
Request For quote: Find where to buy IXFH75N10Q
Datasheet text preview:
Advanced Technical Information
HiPerFET T M Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances
IXFH 75N10Q IXFT 75N10Q
RD S ( o n )
VDSS ID25
= 100 V = 75 A = 20 mW
trr £ 200ns
Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C I S IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
Maximum Ratings 100 100 ±20 ±30 75 300 75 30 1.5 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G G = Gate S = Source S D = Drain TAB = Drain
(TAB)
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
300 6 4
Features
l
1.13/10 N m / l b . i n .
l l
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 100 2.0 4 ±1 0 0 25 1 20 V V nA µA mA m
l l
l
IXYS advanced low gate charge process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 f l a m m a b i l i t y classification
Advantages
l l l
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 %
Easy to mount Space savings High power density
© 1999 IXYS All rights reserved
98550A (6/99)
IXFH 75N10Q IXFT 75N10Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 45 3700 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 425 31 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 65 65 28 140 180 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 65 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
T e r m i n a l s : 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD Outline
gfs Ciss Coss Cr s s td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive;
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 75 300 1.5 200 A A V ns µC A
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
I F = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % I F = 50A,-di/dt = 100 A/µs, VR = 50 V 0.85 8
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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