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Details, datasheet, quote on part number:IXFH7N80
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| Part: | IXFH7N80 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | N-channel Enhancement Mode High Dv/dt, Low TRR , Hdmos(tm): 800v, 7a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFH7N80 datasheet File size : 80 kB |
| Request For quote: | Find where to buy IXFH7N80
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Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A
RDS(on) = 1.4 W trr = 250 ns
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 7 28 7 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns
TO-247 AD (IXFH)
(TAB)
TO-204 AA (IXFM)
D
G
W °C °C °C °C Nm/lb.in.
G = Gate, S = Source,
D = Drain, TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features · International standard packages · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance - easy to drive and to protect · Fast intrinsic Rectifier Applications · DC-DC converters · Synchronous rectification · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control · Temperature and lighting controls · Low voltage relays Advantages · Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) · Space savings · High power density
91527F(7/97)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 1.4 V V nA mA mA W
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 · ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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IXFH 7N80 IXFM 7N80
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 6 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 250 100 35 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 4.7 W (External) 40 100 60 110 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 15 50 100 110 200 100 130 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VG S = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7 28 1.5 250 400 0.5 1.0 7.5 9.0 A A
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
TO-204 AA (IXFM) Outline V ns ns mC mC A A
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90
Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFH 7N80 IXFM 7N80
Fig. 1 Output Characteristics Fig. 2 Input Admittance
9 8 7
TJ = 25°C
VGS = 10V
6V
9 8 7
TJ = 25°C
ID - Amperes
ID - Amperes
5V
6 5 4 3 2 1 0
6 5 4 3 2 1
0
5
10
15
20
25
30
0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
3.0
TJ = 25°C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
2.8
RDS(on) - Normalized
RDS(on) - Ohms
2.00 1.75 1.50 1.25 1.00 0.75
ID = 3.5A
2.6 2.4
VGS= 10V
2.2
VGS= 15V
2.0 1.8 0 2 4 6 8 10
0.50 -50
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
8 7 6
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
ID - Amperes
5 4 3 2 1 0 -50
7N80
1.0 0.9 0.8 0.7 0.6
-25
0
25
50
75
100 125 150
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
© 2000 IXYS All rights reserved
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