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Details, datasheet, quote on part number:IXFH7N90Q
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| Part: | IXFH7N90Q |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HiperFET (tm) Power MOSFETs Q-class: 900v, 7a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFH7N90Q datasheet File size : 139 kB |
| Request For quote: | Find where to buy IXFH7N90Q
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Datasheet text preview:
HiPerFET T M Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IXFH 7N90Q IXFT 7N90Q
VDSS ID25 RDS(on)
= 900 V = 7A = 1.5
trr 250 ns
Maximum Ratings 900 900 ±20 ±30 7 28 7 20 700 5 180 -55 ... +150 150 -55 ... +150 300 1.13/10 6 4 V V V V A A
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT) A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g Features XYS advanced low Qg process ow gate charge and capacitances - easier to drive - faster switching I nternational standard packages L ow RDS (on) U nclamped Inductive Switching (UIS) rated M olding epoxies meet UL 94 V-0 flammability classification
L I
G S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Symbol
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.0 5.0 ±1 0 0 TJ = 25°C TJ = 125°C 50 1 1.5 V V nA µA mA
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
Advantages
E S
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 %
asy to mount pace savings H igh power density
DS98645A(12/02)
© 2002 IXYS All rights reserved
IXFH IXFT
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 6 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 210 35 15 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 4.7 (External), 15 42 13 56 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 18 24 0.7 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
1 2 3
7N90Q 7N90Q
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25, pulse test
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
Source-Drain Diode Symbol IS ISM V SD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7 28 1.5 250 A A V ns µC A
TO-268 Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.75 5.5
T e r m i n a l s : 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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