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Details, datasheet, quote on part number:IXFH80N085
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Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N085 IXFT 80N085
VDSS = 85 V = 80 A ID25 RDS(on) = 9 mW trr £ 200 ns
Symbol V DSS VDGR VG S V GSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 85 85 ±20 ±30 80 75 320 80 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. g g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
300 1.13/10 6 4
Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 85 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 50 1 9 V V nA mA mA mW Advantages · Easy to mount · Space savings · High power density · International standard packages · Low RDS (on) · Rated for unclamped Inductive load switching (UIS) · Molding epoxies meet UL 94 V-0 flammability classification
VDSS VGS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VG S = 0 V
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98709 (03/24/00)
© 2000 IXYS All rights reserved
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IXFH 80N085 IXFT 80N085
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 35 55 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1675 590 50 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 4.7 W (External), 75 95 31 180 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 42 75 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 · ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VG S = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.5 A A V
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = 25A, -di/dt = 100 A/ms, VR = 100 V 0.5 6
200
ns mC A
TO-268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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