|
Details, datasheet, quote on part number:IXFH80N10
| |
Datasheet text preview:
HiPerFET T M Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10 IXFT 80N10
VDSS = 100 V = 80 A ID25 RDS(on) = 12.5 m trr 200 ns
Symbol V DSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C Lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
Maximum Ratings 100 100 ±20 ±30 80 75 320 80 50 2.5 5 300 -55 to +150 150 -55 to +150 V V V V A A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 ( IXFT) Case Style
G S (TAB)
G = Gate D = Drain S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
300
1.13/10 Nm/lb.in. 6 4 g g
Features
l l l
l
International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 50 1 12.5 V V nA µA mA m
Advantages
l l l
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle d 2 %
© 2000 IXYS All rights reserved
98739 (8/00)
IXFH 80N10 IXFT 80N10
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 35 55 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1460 490 41 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 2.5 (External), 63 90 26 180 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 38 65 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 P Q R S Dim. Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
1 2 3
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25, pulse test
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.5 200 A A V ns µC A
TO-268 Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = 25A, -di/dt = 100 A/µs, VR = 50 V 0.5 6
T e r m i n a l s : 1 - Gate 3 - Source
2 - Drain Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
|
|
