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Details, datasheet, quote on part number:IXFH80N10Q
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| Part: | IXFH80N10Q |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HiperFET(tm) Power MOSFETs Q-class N-channel Enhancement Mode Avalanche Rated, High Dv/dt Low Gate Charge And Capacitance: 100v, 80a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFH80N10Q datasheet File size : 54 kB |
| Request For quote: | Find where to buy IXFH80N10Q
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Datasheet text preview:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Preliminary data
I X F H 80N10Q I X F T 80N10Q
VD S S ID25
RDS(on)
= 100 V = 80 A = 15 mW
trr £ 200ns
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 100 100 ±20 ±30 80 320 80 30 1.5 5 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G S (TAB) G = Gate S = Source D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Mounting torque (TO-247) TO-247 AD TO-268
300
Features · IXYS advanced low gate charge process · International standard packages · Low gate charge and capacitance - easier to drive - faster switching · Low RDS (on) · Unclamped Inductive Switching (UIS) rated · Molding epoxies meet UL 94 V-0 flammability classification
1.13/10 Nm/lb.in. 6 4 g g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) V DSS V GS(th) I GSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VG S = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 100 2.0 4 ±100 25 1 15 V V nA mA mA mW
Advantages · Easy to mount · Space savings · High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98592B (7/00)
© 2000 IXYS All rights reserved
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IXFH 80N10Q IXFT 80N10Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 30 45 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 870 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 W (External) 70 68 30 180 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 36 95 0.35 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXFH) Outline
gf s Ciss C oss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 320 1.5 200 A A V ns mC A
J K L M N
1.5 2.49
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = 25A,-di/dt = 100 A/ms, VR = 50 V 0.85 8
TO-268AA (D3 PAK)
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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