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Part: IXFH9N80
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET(tm) Power MOSFETs N-channel Enhancement Mode High Dv/dt, Low T , Hdmos(tm) Family: 800v, 9a
Company: IXYS Corporation
Datasheet: Download IXFH9N80 datasheet File size : 707 kB
Request For quote: Find where to buy IXFH9N80
Datasheet text preview:
Preliminary Data Sheet
HiPerFET Power MOSFETs
TM
VDSS
ID 2 5 8A 9A
RDS(on) 1.1 0.9
trr 250 ns 250 ns
IXFH8N80 800V IXFH9N80 800V
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
TO-247 AD (IXFH) Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 Maximum Ratings 800 800 ±20 ±30 8 9 32 36 8 9 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W °C °C °C Features
· · · · · ·
TO-247 SMD*
G
D (TAB) S
G = Gate S = Source
D = Drain TAB = Drain
*Add suffix letter "S" for surface mountable package
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.088 2 -0.257 ±1 0 0 TJ = 25°C TJ = 125°C 8N80 9N80 250 1 1.1 0.9 4.5 V %/K V %/K nA µA mA
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
Applications
· · · · · ·
V DSS VGS(th) IGSS I DSS RDS(on)
VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls
Advantages
· · ·
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 µs, duty cycle 2%
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
96527A (8/97)
© 1997 IXYS All rights reserved
IXFH8N80
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 7 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 240 60 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 15 70 35 85 130 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 40 30 70 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
IXFH9N80
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
TO-247 SMD Outline Source-Drain Diode Symbol IS I SM VSD trr Q RM I RM IF = IS -di/dt = 100 A/µs, VR = 100 V Test Conditions VGS = 0 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle 2 % TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 0.5 1.0 7.5 9.0 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 8N80 9N80 8N80 9N80 8 9 32 36 1.5 250 400 A A A A V ns ns µC µC A A
1. Gate 2. Drain Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 ØP Q R S
3. Source 4. Drain Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC Inches Min. M a x . .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844
5,017,508 5,034,796
5,049,961 5,063,307
5,187,117 5,237,481
5,486,715 5,381,025
IXFH8N80
Figure 1. Output Characteristics at 25OC
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IXFH9N80
Figure 2. Output Characteristics at 125OC
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Figure 3. RDS(on) normalized to 15A/25OC vs. ID
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Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
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Figure 5. Drain Current vs. Case Temperature
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Figure 6. Admittance Curves
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© 1997 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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