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Part: IXFI26N50
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N-channel Enhancement Mode High Dv/dt, Low TRR , Hdmos(tm): 500v, 26a
Company: IXYS Corporation
Datasheet: Download IXFI26N50 datasheet File size : 707 kB
Request For quote: Find where to buy IXFI26N50
Datasheet text preview:
HiPerFET T M Power MOSFETs
VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50
ID25
RDS(on)
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
500 V 21 A 0.25 500 V 24 A 0.23 500 V 26 A 0.20 trr 250 ns
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 21N50 24N50 26N50 21N50 24N50 26N50 21N50 24N50 26N50
Maximum Ratings 500 500 ±20 ±30 21 24 26 84 96 104 21 24 26 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A A A A mJ V/ns W °C °C °C °C Nm/lb.in.
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) Case Style
G S TO-204 AE (IXFM) (TAB)
EAR dv/dt PD TJ TJM Tstg TL Md Weight
TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
D G = Gate, S = Source, D = Drain, TAB = Drain
G
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 1.13/10
TO-204 = 18 g, TO-247 = 6 g
Features · International standard packages · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance - easy to drive and to protect · Fast intrinsic Rectifier Applications · DC-DC converters · Synchronous rectification · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control · Temperature and lighting controls · Low voltage relays Advantages · Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) · High power surface mountable package · High power density
91525H (9/99)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±1 0 0 TJ = 25°C TJ = 125°C 200 1 V V nA µA mA
V DSS VGS(th) IG S S I DSS
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V
© 1999 IXYS All rights reserved
IXFH21N50 IXFM21N50
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) VGS = 10 V, ID = 0.5 ID25 21N50 24N50 26N50 Pulse test, t 300 µs, duty cycle d 2 % 11 21 4200 450 135 16 33 65 30 135 28 62 0.25 25 45 80 40 160 40 85 Characteristic Values Min. Typ. Max. 0.25 0.23 0.20 S pF pF pF ns ns ns ns nC nC nC
IXFH24N50 IXFM24N50 IXFT24N50
IXFH26N50 IXFM26N50 IXFT26N50
TO-247 AD (IXFH) Outline
1
2
3
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S
Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247 Case Style)
0.42 K/W K/W
Source-Drain Diode Symbol IS Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 21N50 24N50 26N50 21N50 24N50 26N50 21 24 26 84 96 104 1.5 250 400 1 2 10 15 A A A A A A V ns ns µC µC A A
TO-204 AE (IXFM) Outline
ISM
Repetitive; pulse width limited by TJM
VSD t rr QRM IRM
IF = IS, VGS = 0 V, Pulse test, t 300 µs, duty cycle d 2 % IF = IS -di/dt = 100 A/µs, VR = 100 V TJ = TJ = TJ = TJ = TJ = TJ = 25°C 125°C 25°C 125°C 25°C 125°C
Pins: 1 - Gate, 2 - Source, Case - Drain
Dim. A A1 b D e e1 L p p1 q R R1 s 10.67 5.21 11.18 3.84 3.84 12.58 3.33 16.64 Millimeter Min. Max. 6.4 1.53 1.45 11.4 3.42 1.60 22.22 11.17 5.71 12.19 4.19 4.19 13.33 4.77 17.14 .420 .205 .440 .151 .151 .495 .131 .655 Inches Min. Max. .250 .060 .057 .450 .135 .063 .875 .440 .225 .480 .165 .165 .525 .188 .675
Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S)
TO-268 Outline
30.15 BSC
1.187 BSC
Min. Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXFH21N50 IXFM21N50
IXFH24N50 IXFM24N50 IXFT24N50
Fig. 2 Input Admittance
IXFH26N50 IXFM26N50 IXFT26N50
Fig. 1 Output Characteristics
50 45 40 35 30 25 20 15 10 5 0
5V VGS = 10V 7V TJ = 25°C 6V
50 45 40 35 30 25 20 15 10 5 0
TJ = 25°C VDS = 10V
ID - Amperes
0
5
10
15
20
25
30
35
ID - Amperes
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.6 1.5
TJ = 25°C
2.50 2.25
Fig. 4 Temperature Dependence of Drain to Source Resistance
RDS(on) - Normalized
1.4 1.3 1.2 1.1 1.0 0.9 0 5 10 15 20 25 30 35 40 45 50
VGS = 15V VGS = 10V
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 12A
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
30
26N50 24N50
1.2 1.1
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
VGS(th) BVDSS
BV/VG(th) - Normalized
0 25 50 75 100 125 150
25
ID - Amperes
20 15 10 5 0 -50
21N50
1.0 0.9 0.8 0.7 0.6
-25
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
© 1999 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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