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Part: IXFJ13N50
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET (tm) Power MOSFETs: 500v, 13a
Company: IXYS Corporation
Datasheet: Download IXFJ13N50 datasheet File size : 707 kB
Request For quote: Find where to buy IXFJ13N50
Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFJ 13N50 VDSS
ID (cont) RDS(on) trr
= 500 = 13 = 0.4 £ 250
V A W ns
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 500 500 ±20 ±30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C g Features · Low profile, high power package · Long creep and strike distances · Easy up-grade path for TO-220 designs · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance - easy to drive and to protect · Fast intrinsic Rectifier Applications
G = Gate, S = Source, D = Drain, TAB = Drain G D S
é
(TAB)
1.6 mm (0.062 in.) from case for 10 s
300 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA mA mA W
· · · · · · · ·
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V
DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays
Advantages · High power, low profile package · Space savings · High power density
VGS = 10 V, ID = 0.5 · ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98578 (2/99)
© 2000 IXYS All rights reserved
1-4
IXFJ 13N50
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7.5 9.0 2800 VGS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25, RG = 4.7 W (External) 27 76 32 110 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 15 40 30 40 100 60 120 25 50 0.7 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim.
TO-268 Outline
gf s C iss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
Inches Min Max .193 .106 .045 .075 .016 .057 .201 .114 .057 .083 .026 .063 Millimeters Min Max 4.90 2.70 1.15 1.90 .040 1.45 5.10 2.90 1.45 2.10 .065 1.60
A A1 b b2 C C2
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = IS -di/dt = 100 A/ms, VR = 100 V Test Conditions VG S = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 13 52 1.5 250 350 0.6 1.25 9 15 A A V ns ns mC mC A A
D D1 E E1 e H L L1 L2
.543 .551 .488 .500 .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 .800 .091 .045
13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15
1.395 34.67 35.43
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFJ 13N50
25
TJ = 25°C VGS=10V 8V 7V 6V
25 20
TJ = 25°C
20
ID - Amperes
ID - Amperes
20
15 10
5V
15 10 5 0
5 0 0 5 10 15
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VGS - Volts
Figure 1. Output Characteristics at 25OC
1.4
TJ = 25°C
Figure 2. Output Characteristics at 125OC
2.50 2.25
1.3
RDS(on) - Normalized
RDS(on) - Normalized
VGS = 10V
2.00
ID = 6A
1.2 1.1
VGS = 15V
1.75 1.50 1.25 1.00 0.75
1.0 0.9 0.8 0 5 10 15 20 25
0.50 -50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure 3. RDS(on) normalized to 0.5 ID25 value
15.0
13N50
Figure 4. RDS(on) normalized to 0.5 ID25 value
1.2 1.1
VGS(th) BVDSS
BV/VG(th) - Normalized
-25 0 25 50 75 100 125 150
12.5
ID - Amperes
10.0 7.5 5.0 2.5 0.0 -50
1.0 0.9 0.8 0.7 0.6 0.5 -50
-25
0
25
50
75
100
125
150
TC - Degrees C
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
© 2000 IXYS All rights reserved
3-4
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