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Details, datasheet, quote on part number:IXFJ32N50Q
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| Part: | IXFJ32N50Q |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HiperFET (tm) Power MOSFET, Q-class: 500v, 32a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFJ32N50Q datasheet File size : 92 kB |
| Request For quote: | Find where to buy IXFJ32N50Q
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Datasheet text preview:
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFJ 32N50Q VDSS
ID(cont)
R DS(on) trr
= 500 = 32 = 0.15 < 250
V A W ns
Maximum Ratings 500 500 ±20 ±30 32 128 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A J mJ V/ns W °C °C °C °C Features · Low profile, high power package · Long creep and strike distances · Easy up-grade path for TO-220 designs · Low RDS (on) low Qg process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance - easy to drive and to protect · Fast intrinsic Rectifier Applications
G = Gate, S = Source, D = Drain, TAB = Drain G D S
é
(TAB)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 100 1 0.15 V V nA mA mA W
· · · · · · · ·
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays
Advantages · High power, low profile package · Space savings · High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98579B (5/31/00)
© 2000 IXYS All rights reserved
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IXFJ 32N50Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 18 28 3950 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 RG = 2 W (External) 42 75 20 153 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 26 85 0.35 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim.
TO-268 Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
Inches Min Max .193 .106 .045 .075 .016 .057 .201 .114 .057 .083 .026 .063 Millimeters Min Max 4.90 2.70 1.15 1.90 .040 1.45 5.10 2.90 1.45 2.10 .065 1.60
A A1 b b2 C C2 D D1 E E1 e H L L1 L2
Source-Drain Diode Symbol IS ISM VSD t rr Q rr IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns mC A
.543 .551 .488 .500 .624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 .800 .091 .045
13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15
1.395 34.67 35.43
IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 0.75 7.5
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFJ 32N50Q
Figure 1. Output Characteristics at 25OC
80 70 60
T J = 25 O C V GS =1 0 V 9V 8V 7V 6V
Figure 2. Output Characteristics at 125OC
50
T J = 125 OC V GS = 9V 8V 7V 6V
40
ID - Amperes
50 40 30 20 10 0
ID - Amperes
30
5V
20 10
4V
5V
0
4
8
12
16
20
0
0
4
8
12
16
20
V DS - Volts
V DS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
2 .8
V GS = 10V
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2 .8
V GS = 10V
RDS(ON) - Normalized
T j= 1 2 5 0 C
RDS(ON) - Normalized
2 .4 2 .0 1 .6
2 .4
ID = 32A
2 .0 1 .6 1 .2 0 .8 25
ID = 16A
T j= 2 5 0 C
1 .2 0 .8
0
10
20
30
40
50
60
50
75
1 00
1 25
1 50
ID - Amperes
T J - Degrees C
Figure 5. Drain Current vs. Case Temperature
40 32
Figure 6. Admittance Curves
50 40
ID - Amperes
24 16 8 0
ID - Amperes
30 20 10 0
TJ = 125 oC T J = 25 oC
-50
-2 5
0
25
50
75
1 00 12 5 1 50
2
3
4
5
6
T C - Degrees C
VG S - Volts
© 2000 IXYS All rights reserved
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