|
Details, datasheet, quote on part number:IXFJ40N30
| |
| Part: | IXFJ40N30 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HiperFET (tm) Power MOSFETs: 300v, 40a |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFJ40N30 datasheet File size : 35 kB |
| Request For quote: | Find where to buy IXFJ40N30
|
| |
Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
IXFJ 40N30 VDSS = 300
ID25 = RDS(on) =
V 40 A 80 mW
trr < 200 ns
Symbol VDSS VDGR VG S VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 300 300 ±20 ±30 40 160 40 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C g Features
G = Gate, S = Source, D = Drain, TAB = Drain G D S
é
(TAB)
· Low profile, high power package · Long creep and strike distances · Easy up-grade path for TO-220 · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) · Low package inductance · Fast intrinsic Rectifier
Applications - easy to drive and to protect rated designs
1.6 mm (0.062 in.) from case for 10 s
300 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 V V nA mA mA
· · · · · · · · · · ·
VDSS VGS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V
DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays
Advantages High power, low profile package Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 %
80 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
98536 1/99)
© 2000 IXYS All rights reserved
1-2
IXFJ 40N30
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 22 25 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 745 280 20 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 RG = 2 W (External) 60 75 45 177 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 28 78 30 90 100 90 200 50 105 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim.
TO-268 Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 ID25, pulse test
All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
Inches Min Max .193 .201 .106 .114 .045 .075 .016 .057 .543 .488 .057 .083 .026 .063 .551 .500 Millimeters Min Max 4.90 5.10 2.70 2.90 1.15 1.90 .040 1.45 13.80 12.40 1.45 2.10 .065 1.60 14.00 12.70
A A1 b b2 C C2 D D1 E E1 e H L L1 L2
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VG S = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 160 1.5 200 350 A A V ns ns
.624 .632 .524 .535 .215 BSC 1.365 .780 .079 .039 1.395 .800 .091 .045
15.85 16.05 13.30 13.60 5.45 BSC 34.67 19.81 2.00 1.00 35.43 20.32 2.30 1.15
IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ = 25°C TJ = 125°C
characteristic curves are located in the IXFH 40N30 data sheet.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
|
|
