|
Details, datasheet, quote on part number:IXFK100N10
| |
Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK100N10 IXFN150N10
ID 2 5
RDS(on) 12 mW 12 mW
100 V 100 A 100 V 150 A trr £ 200 ns
TO-264 AA (IXFK)
Symbol VDSS VDGR VG S VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100 76 560 75 30 5 500 100 100 ±20 ±30 150 560 75 30 5 520 150 -55 ... +150 V V V V A A A A mJ V/ns W °C °C °C °C V~ V~
G S S S D D G G D S
(TAB)
miniBLOC, SOT-227 B (IXFN) E153432
S
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
-55 ... +150
1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s
300 0.9/6 10
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
q q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 12 V V nA mA mA mW
VDSS VGH(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VG S = 0 V
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays
q q q q q q q
VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 %
Advantages Easy to mount Space savings High power density
q q q
IXYS reserves the right to change limits, test conditions, and dimensions.
92803G(8/96)
© 2000 IXYS All rights reserved
1-4
IXFK 100N10 IXFN 150N10
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 1800 30 VGS = 10 V, VDS = 0.5 · VDSS, ID = 75 A RG = 1 W (External), 60 100 60 360 VGS = 10 V, VDS = 0.5 · VDSS, ID = 75 A 75 180 TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.24 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK RthJC RthCK
VDS = 10 V; ID = 50 A, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25 A -di/dt = 100 A/ms, VR = 50 V Test Conditions VG S = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IXFK 100 IXFN 150 IXFK 100 IXFN 150 100 150 400 600 1.75 150 0.6 8 200 A A A A V ns mC A
miniBLOC, SOT-227 B
IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 %
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK 100N10 IXFN 150N10
Fig. 1 Output Characteristics
400
TJ = 25°C VGS = 10V 9V
Fig. 2 Input Admittance
300 250
350 300
ID - Amperes
250
8V
ID - Amperes
200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10
TJ = 125°C TJ = 125°C
200 150 100 50
7V 6V 5V
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25°C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.00 1.75
1.3
RDS(on) - Normalized
1.2 1.1 1.0
VGS = 15V VGS = 10V
RDS(on) - Normalized
1.50
ID = 75A
1.25 1.00 0.75 0.50 -50
0.9 0.8 0 40 80 120 160 200 240 280 320
-25
0
25
50
75
100 125 150
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
175
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
BVDSS
150N10
150
1.1
BV/VG(th) - Normalized
ID - Amperes
125 100
1.0 0.9 0.8
VGS(th)
100N10
75 50 25 0 -50
0.7 0.6
-25
0
25
50
75
100 125 150
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
© 2000 IXYS All rights reserved
3-4
|
|
