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Part: IXFK105N07
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 70V HiperFET Power MOSFET
Company: IXYS Corporation
Datasheet: Download IXFK105N07 datasheet File size : 112 kB
Request For quote: Find where to buy IXFK105N07
Datasheet text preview:
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07
ID 2 5
RDS(on) 6 mW 7 mW 6 mW
60 V 110 A 70 V 105 A 70 V 110 A trr £ 250 ns
Symbol V DSS VDGR VG S V GSM ID25 ID130 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, die capability TC = 130°C, limited by external leads TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C N07 N06 N07 N06
Maximum Ratings 70 60 70 60 ±20 ±30 110 76 600 100 30 2 5 500 -55 ... +150 150 -55 ... +150 V V V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. Nm/lb.in. g
TO-264 AA (IXFK)
G D S
(TAB)
Features · International standard packages · JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · · · · DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls · Low voltage relays Advantages · Easy to mount · Space savings · High power density
92802I (10/97)
1.6 mm (0.063 in) from case for 10 s Mounting torque Terminal connection torque
300 0.9/6 10
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2 V V V nA mA mA
V DSS VGS (th) I GSS IDSS RDS(on)
V GS VDS V GS VDS V GS
= 0 V, ID = 1 mA = VGS, ID = 8 mA = ±20 VDC, VDS = 0 = 0.8 · VDSS =0V
4 ±200
TJ = 25°C TJ = 125°C 110N06/110N07 105N07
400 2
V GS = 10 V, ID = 0.5 · ID25 Note 2
6 mW 7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 60 80 9000 VGS = 0 V, VDS = 25 V, f = 1 MHz 4000 2400 30 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 1 W (External), 60 100 60 480 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 60 240 TO-264 AA TO-264 AA 0.15 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
TO-264 AA Outline
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25, Note 2
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = 25 A -di/dt = 100 A/ms, VR = 50 V Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 110N06/110N07 105N07 110 105 440 420 1.7 150 250 0.7 9 A A A A V ns mC A
VGS = 0 V
Repetitive; pulse width limited by TJM 110N06/110N07 105N07 IF = 100 A, VGS = 0 V, Note 2
Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXFK 110N06 IXFK 105N07 IXFK 110N07
175 150 600
VGS=10V 9V 8V 7V 6V TJ=25OC
TJ = 25OC
500
VGS=10V 9V 8V
ID - Amperes
125 100 75 50 25 0 0.0
ID - Amperes
400
7V
5V
300 200 100 0
6V
5V
0.5
1.0
1.5
2. 0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
VDS - Volts
Figure 1. Output Characteristics at 25OC
6 00
VDS > 4RDS(ON)
Figure 2. Extended Output Characteristics
80
Transconductance - Siemens
5 00
TJ=150OC
70 60 50 40 30 20 10 0 0
VGS=10V
TJ = 25oC
ID - Amperes
4 00
TJ=25OC
TJ = 100oC
3 00 2 00 1 00 0 2 4 6
TJ=100OC
TJ = 150oC
8
10
12
100
200
300
400
500
6 00
VGS - Volts
IC - Amperes
Figure 3. Admittance Curves
1. 4
TJ = 25oC
Figure 4. Transconductance vs. Drain Current
2. 25 2. 00
ID = 75A VGS = 10V
RDS(ON) - Normalized
1. 3
RDS(ON) - Normalized
500 600
1. 2 1. 1 1. 0 0. 9 0. 8 0 100 2 00 300 400
VGS = 10V VGS = 15V
1. 75 1. 50 1. 25 1. 00 0. 75 0. 50 - 50 - 25 0 25 50 75 100 125 150 1 75
ID - Amperes
TJ - Degrees C
Figure 5. RDS(on) normalized to 0.5 ID25 value
Figure 6. Normalized RDS(on) vs. Junction Temperature 3-4
© 2000 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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