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Details, datasheet, quote on part number:IXFK120N20
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Datasheet text preview:
H i P e r F E T TM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol V DSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C
IXFX 120N20 IXFK 120N20
VDSS ID25
RDS(on)
= 200 V = 120 A = 17 m
trr 250 ns
Maximum Ratings 200 200 ±20 ±30 120 76 480 120 64 3 15 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
G
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
0.9/6 Nm/b.in. 6 10 g g
Features · International standard packages · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance - easy to drive and to protect · Fast intrinsic rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control · Temperature and lighting controls Advantages · PLUS 247TM package for clip or spring mounting · Space savings · High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 17 m
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 · ID25 Note 1
IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved DS98636C(05/03)
IXFK 120N20 IXFX 120N20
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 40 77 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 2200 1000 40 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 RG = 1 (External), 65 110 35 300 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 50 170 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
PLUS247TM (IXFX) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 · ID25
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 120 480 1.5 250 A A V ns µC A
TO-264 AA Outline
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
0.8 8
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFK 120N20 IXFX 120N20
Fig. 1. Output Characteristics @ 25 Deg. C
10 2 15 0 90 VG S = 10V 9V 8V 10 8
Fig. 2. Extended Output Characteristics @ 25 deg. C
7V
10 5 6V 10 2 90 60 30 0
VG S = 10V 9V 8V
7V
I D - Amperes
75 60 45 30 1 5 0 0 0.5 1 15 . 2 2.5 3
I D - Amperes
6V
5V
5V
0
1
2
3
4
5
V DS - Volts
V DS - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
10 2 15 0 90 VG S = 10V 9V 8V 7V 2.2 2
Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature
VG S = 10V
R D S (on) - Normalized
6V
18 . 16 . 14 . 12 . 1 0.8 0.6 I D = 120A I D = 60A
I D - Amperes
75 60 45 5V 30 1 5 0 0 1 2 3 4 5
-50
-25
0
25
50
75
10 0
15 2
10 5
V DS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID2 5 Value vs. ID
2.2 VG S = 10V 2 10 4 10 2 T J = 125º C 10 0
F ig . 6. Drain Current vs. Case Temp erat u re
R D S (on) - Normalized
18 . 16 . 14 . 12 . 1 0.8 0 30 60 90
I D - Amperes
T J = 25º C
80 60 40 20 0
10 2
10 5
10 8
-50
-25
0
25
50
75
10 0
15 2
10 5
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
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