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Details, datasheet, quote on part number:IXFK120N25
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| Part: | IXFK120N25 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => with FAST Intrinsic Diode |
| Description: | 250V HiperFET Power MOSFET |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFK120N25 datasheet File size : 101 kB |
| Request For quote: | Find where to buy IXFK120N25
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Datasheet text preview:
Advance Technical Information
H i P e r F E T TM Power MOSFETs
Single MOSFET Die
IXFX 120N25 IXFK 120N25
VDSS ID25
RDS(on)
= 250 V = 120 A = 22 m
trr 250 ns
Symbol V DSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C
Maximum Ratings 250 250 ±20 ±30 120 75 480 90 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
G
TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
300
0.7/6 Nm/lb.in. 6 10 g g
Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2.0 V 4.0 V ±200 nA TJ = 25°C TJ = 125°C 50 µA 3 mA 22 m
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls
Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density
l
© 2002 IXYS All rights reserved
98912 (2/02)
IXFK 120N25 IXFX 120N25
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 62 85 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1730 550 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External), 38 175 35 400 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 155 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V D S = 10 V; ID = 0.5 ID25
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 120 480 1.5 250 A A V ns µC A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .1 9 0 . 2 0 5 .090 .100 .075 .085 .0 4 5 . 0 5 5 .075 .084 .115 .123 .0 2 4 . 0 3 1 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .2 2 0 0 . 2 4 4 .1 7 0 . 1 9 0
TO-264 AA Outline
IF = 30A,-di/dt = 100 A/µs, VR = 100 V
0.8 8
Dim.
Note: 1. Pulse test, t 300 µs, duty cycle d 2 %
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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