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Part: IXFR150N15
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
Description: 150V HiperFET Power MOSFET
Company: IXYS Corporation
Datasheet: Download IXFR150N15 datasheet File size : 585 kB
Request For quote: Find where to buy IXFR150N15
Datasheet text preview:
Advanced Technical Information
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside) Single MOSFET Die
IXFR 150N15 VDSS = 150 V
ID25 = 105 A RDS(on) = 12.5 mW trr £ 250 ns
Symbol V DSS VDGR VG S V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 150 150 ±20 ±30 105 76 600 150 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns
ISOPLUS 247TM E153432
G = Gate S = Source * Patent pending
D = Drain
Features W °C °C °C °C V~ g · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<35pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier Applications
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 12.5 mW
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS V GS = 0 V VGS = 10 V, ID = IT Notes 2, 3
· DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC and DC motor and servo controls · Amplifiers Advantages · · · · Easy assembly Space savings High power density Low collector capacitance to ground (low EMI)
IXYS reserves the right to change limits, test conditions, and dimensions.
98656 (03/17/00)
© 2000 IXYS All rights reserved
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IXFR 150N15
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 50 75 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 2600 1200 50 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 1 W (External), Notes 2, 3 60 110 45 360 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT Notes 2, 3 65 190 0.3 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VG S = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 150 600 1.5 250 A A V ns mC A
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
1.1 13
Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 75A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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