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Details, datasheet, quote on part number:IXFR24N100
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Datasheet text preview:
HiPerFETTM Power MOSFETs I S O P L U S 2 4 7 TM
(Electrically Isolated Back Surface)
IXFR 2 4 N 1 0 0 V DSS = = I D25 R DS(on) = trr 250 ns
1000 V 22 A 0.39
Single MOSFET Die
Symbol V DSS V DGR V GS V GSM I D25 I DM I AR E AR E AS dv/dt PD TJ T JM T stg TL V ISOL Weight
T e s t Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
M a x i m u m Ratings 1000 1000 ±20 ±30 22 96 24 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g
I S O P L U S 247 T M
G
D
Isolated back surface*
G = Gate S = Source
D = Drain
* Patent pending
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Features S ilicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation L ow drain to tab capacitance(<30pF)
L
ow RDS (on) HDMOSTM process ugged polysilicon gate cell structure
R U
nclamped Inductive Switching (UIS) rated F ast intrinsic Rectifier Applications D C-DC converters
B S
Symbol
Te s t Conditions
C h a r a c t e r i s t i c Values (TJ = 25°C, unless otherwise specified) m i n . typ. m a x . 1000 2.5 V 5.0 V ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.39
attery chargers
V DSS V GS(th) I GSS I DSS R DS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 24A Note 1
witched-mode and resonant-mode power supplies D C choppers
A
C motor control
Advantages E asy assembly
S
pace savings igh power density
98599-A (8/02)
H
© 2002 IXYS All rights reserved
IXFR 24N100
Symbol T est Conditions C h a r a c t e r i s t i c Values (TJ = 25°C, unless otherwise specified) m i n . typ. m a x . Note 2 15 22 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 750 260 35 VGS = 10 V, VDS = 0.5 · VDSS, ID = 24A RG = 1 (External), 35 75 21 250 VGS = 10 V, VDS = 0.5 · VDSS, ID = 24A 55 135 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W I S O P L U S 247 OUTLINE
g fs C iss C oss C rss t d(on) tr t d(off) tf Q g(on) Q gs Q gd R thJC R thCK
VDS = 10 V; ID = 24A
S o u r c e - D r a i n Diode Symbol IS I SM V SD t rr Q RM I RM T est Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
C h a r a c t e r i s t i c Values (TJ = 25°C, unless otherwise specified) m i n . typ. m a x . 24 96 1.5 250 A A V ns µC A
IF = IS, -di/dt = 100 A/µs, VR = 100 V
1.0 8
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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