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Details, datasheet, quote on part number:IXFR30N50QIXFR32N50Q
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Datasheet text preview:
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
Preliminary data
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
VDSS IXFR 30N50Q IXFR 32N50Q
ID 2 5
RDS(on) 0.16 W 0.15 W
500 V 29 A 500 V 30 A trr £ 250 ns
Maximum Ratings 500 500 ±20 ±30 30N50 32N50 30N50 32N50 30N50 32N50 30 120 30 1.5 45 5 310 -55 ... +150 150 -55 ... +150 300 2500 6 V V V V A A A J mJ V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E 153432
G
D
Isolated back surface* G = Gate S = Source * Patent pending D = Drain
Features · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<50pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages · Easy assembly · Space savings · High power density
98608B (7/00)
VDSS VGS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1, 2
DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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IXFR 30N50Q IXFR 32N50Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 18 28 3950 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 1 W (External), 42 75 20 150 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT 26 85 0.40 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: 1. IT test condition: IXFR30N50: IT = 15A IXFR32N50: IT = 16A Pulse test, t £ 300 ms, duty cycle d £ 2 % Test Conditions VG S = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns mC A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/ms, VR = 100 V
0.75 7.5
Note: 2.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXFR 30N50Q IXFR 32N50Q
Figure 1. Output Characteristics at 25OC
80 70 60
TJ = 25OC VGS=10V 9V 8V 7V 6V
Figure 2. Output Characteristics at 125OC
50
TJ = 125OC VGS= 9V 8V 7V
6V
40
ID - Amperes
50 40 30 20 10 0
ID - Amperes
30
5V
20 10
4V
5V
0
4
8
12
16
20
0
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
2.8
VGS = 10V
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8
VGS = 10V
RDS(ON) - Normalized
Tj=1250 C
RDS(ON) - Normalized
2.4 2.0 1.6
2.4
ID = 32A
2.0 1.6 1.2 0.8 25
ID = 16A
Tj=250 C
1.2 0.8
0
10
20
30
40
50
60
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
40 32
Figure 6. Admittance Curves
50 40
ID - Amperes
24 16 8 0
ID - Amperes
30 20 10 0
TJ = 125oC TJ = 25oC
-50
-25
0
25
50
75
100 125 150
2
3
4
5
6
TC - Degrees C
VGS - Volts
© 2000 IXYS All rights reserved
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