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Details, datasheet, quote on part number:IXFR44N60
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| Part: | IXFR44N60 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | HiperFET(tm) Power MOSFETs ISOplus247(tm) (electrically ISOlated Back Surface)- Single MOSFET Die |
| Company: | IXYS Corporation |
| Datasheet: | Download IXFR44N60 datasheet File size : 35 kB |
| Request For quote: | Find where to buy IXFR44N60
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Datasheet text preview:
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface) Single MOSFET Die
IXFR 44N60
VD S S = 6 0 0 V ID25 = 38 A RDS(on) = 130 mW trr £ 250 ns
Symbol VDSS VDGR VG S VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 600 600 ±20 ±30 38 60 44 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
ISOPLUS 247TM E153432
G = Gate S = Source * Patent pending
D = Drain
Features W °C °C °C °C V~ g · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<30pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier Applications
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 130 mW
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V. ID = 250mA VDS = VGS. ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS V GS = 0 V VGS = 10 V, ID = IT Notes 2, 3
· DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC & DC motor control Advantages · · · · Easy assembly Space savings High power density Low noise to ground
IXYS reserves the right to change limits, test conditions, and dimensions.
98728 (06/09/00)
© 2000 IXYS All rights reserved
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IXFR 44N60
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 30 45 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 42 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 2.0 W (External), Notes 2, 3 55 110 45 330 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT Notes 2, 3 60 65 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VG S = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 176 1.3 250 A A V ns mC A
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
1.4 8
Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 22A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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