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Details, datasheet, quote on part number:IXGA12N60CD1
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Datasheet text preview:
HiPerFASTTM IGBT LightspeedTM Series
IXGA 12N60CD1 IXGP 12N60CD1
VCES IC25
VCE(sat)
tfi(typ)
= 600 V = 24 A = 2.7 V = 55 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms
Maximum Ratings 600 600 ±20 ±30 24 12 48 V V V V A A A A W °C °C °C
TO-263 (IXGA)
G E C (TAB)
TO-220 AB (IXGP)
= 15 V, TVJ = 125°C, RG = 33 ICM = 24 V GE Clamped inductive load, L = 300 µH @ 0.8 VCES TC = 25°C 100 -55 ... +150 150 -55 ... +150 Mounting torque with screw M3 Mounting torque with screw M3.5
G
C
E
G = Gate E = Emitter
C = Collector T A B = Collector
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g °C
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
· Very high frequency IGBT · New generation HDMOSTM process · International standard package · High peak current handling capability
JEDEC TO-220AB and TO-263AA
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ±100 2.1 2.7 V V µA mA nA V
Applications
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VGE = VGE
· · · · ·
V C E = 0.8 VCES V GE = 0 V V C E = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers
Advantages
· Fast switching speed · High power density
© 2002 IXYS All rights reserved
98513C (2/02)
IXGA 12N60CD1 IXGP 12N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IGBT 0.25 10 10 20 20 60 55 0.09 20 20 0.5 85 85 0.27 180 180 0.60 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
Dim. A B C D E F G H J K M N Q R Millimeter Min. M a x . 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2 .5 4 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. M a x . 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0 .1 0 0 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-220 AB (IXGP) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
TO-263 AA (IXGA) Outline
1.25 K / W K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions I F = 15A; T VJ = 150°C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.7 T VJ = 25°C 2 2.5 2.5 V V A
Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
V R = 100 V; I F =25A; -di F / d t = 100 A/µs L < 0.05 µH; T VJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C Diode
35
ns 1.6 K / W
A A1 b b2 c c2
Min. Recommended Footprint
D D1 E E1 e L L1 L2 L3 L4 R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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