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Details, datasheet, quote on part number:IXGA15N120C
 
 
Part:IXGA15N120C
Category:Discrete => IGBTs (Insulated Gate Bipolar Transistors)
Description:1200V Igbt
Company:IXYS Corporation
Datasheet:Download IXGA15N120C datasheet   File size : 101 kB
Request For quote:  Find where to buy IXGA15N120C
 



Datasheet text preview:
IGBT
Lightspeed Series
I X G A 15N120C I X G P 15N120C
VCES IC25 VCE(sat)
t fi(typ)
=1200 V = 30 A = 3.8 V = 115 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C Features V V V V A A A A
G E C (TAB)
G CE
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263
0.45/4 N m / l b . i n . 0.55/5 N m / l b . i n . 4 2 g g
· International
standard packages
· · MOS Gate turn-on
- drive simplicity Applications
JEDEC TO-220AB and TO-263AA Low switching losses
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 µA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15
Min. 1200 2.5 TJ = 25°C TJ = 125°C
Characteristic Values Typ. Max. V 5.0 100 3.5 ±100 3.8 V µA mA nA V V
· · · · ·
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages
· · ·
Easy to mount with one screw Reduces assembly time and cost High power density
TJ = 125°C
© 2003 IXYS All rights reserved
3.0
DS98632A(01/03)
IXGA 15N120C IXGP 15N120C
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % 1720 95 35 69 13 26 25 15 150 115 1.05 25 18 0.60 220 250 2.1 0.83 200 190 1.6 pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline
Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side
Characteristic Values Min. Typ. Max. 12 15 S
TO-220 AB Dimensions
1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1