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Part: IXGA20N100
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1000V Igbt
Company: IXYS Corporation
Datasheet: Download IXGA20N100 datasheet File size : 541 kB
Request For quote: Find where to buy IXGA20N100
Datasheet text preview:
IGBT
Preliminary Data Sheet
I X G A 20N100 VCES I X G P 20N100 IC25 VCE(sat)
= 1000 V = 40 A = 3.0 V
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 Clamped inductive load, L = 300 µH TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C Features V V V V A A A A
G E C (TAB)
G CE
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263
0.45/4 N m / l b . i n . 0.55/5 N m / l b . i n . 4 2 g g
· International
standard packages
· · MOS Gate turn-on
- drive simplicity Applications
JEDEC TO-220AB and TO-263AA High current handling capability
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15
Min. 1000 2.5 TJ = 25°C TJ = 125°C
Characteristic Values Typ. Max. V 5.0 250 1 ±100 2.2 3.0 V µA mA nA V
· · · · · · · · ·
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge
Advantages Easy to mount with one screw Reduces assembly time and cost High power density
© 2003 IXYS All rights reserved
DS98615B(01/03)
IXGA 20N100 IXGP 20N100
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % 1750 100 38 90 73 13 26 30 30 350 280 3.5 30 30 0.65 700 520 6.5 0.83 700 700 8.0 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline
Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side
Characteristic Values Min. Typ. Max. 12 16 S
TO-220 AB Dimensions
1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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