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Part: IXGA20N120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1200V HiperFET Power MOSFET
Company: IXYS Corporation
Datasheet: Download IXGA20N120 datasheet File size : 541 kB
Request For quote: Find where to buy IXGA20N120
Datasheet text preview:
IGBT
I X G A 20N120 VCES I X G P 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 W °C °C °C °C °C Features V V V V A A A A
G E C (TAB)
GC E
TO-220AB (IXGP)
TO-263 AA (IXGA)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263
· International
standard packages
0.45/4 N m / l b . i n . 0.55/5 N m / l b . i n . 4 2 g g
JEDEC TO-220AB and TO-263AA · High current handling capability
· MOS Gate turn-on
- drive simplicity Applications
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Characteristic Values Min. Typ. Max. 1200 2.5 TJ = 25°C TJ = 125°C 5.0 250 1 ±100 2.0 2.5 V V µA mA nA V
· · · · · ·
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge
Advantages
· · ·
Easy to mount with one screw Reduces assembly time and cost High power density
© 2002 IXYS All rights reserved
98752A (06/02)
IXGA 20N120 IXGP 20N120
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % 1750 90 31 90 63 13 26 28 20 400 380 6.5 30 27 0.90 700 550 9.5 0.83 800 700 10.5 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline
Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side
Characteristic Values Min. Typ. Max. 12 16 S
TO-220 AB Dimensions
1. 2. 3. 4.
Gate Collector Emitter Collector Bottom Side
Min. Recommended Footprint (Dimensions in inches and mm)
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
Others parts begin by ix
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