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Part: IXGA7N60BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT with FAST Diodes
Description:
Company: IXYS Corporation
Datasheet: Download IXGA7N60BD1 datasheet File size : 72 kB
Request For quote: Find where to buy IXGA7N60BD1
Datasheet text preview:
Advanced Technical Information
HiPerFASTTM IGBT with Diode
IXGA 7 N 6 0 B D 1 IXGP 7 N 6 0 B D 1
VCES IC25 VCE(sat) tfi
= 600 V = 14 A = 2.0 V = 150ns
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 18 Clamped inductive load @ 0.8 VCES TC = 25°C
Maximum Ratings 600 600 ±20 ±30 14 7 56 ICM = 14 80 -55 ... +150 150 -55 ... +150 300 M3 M3.5 V V V V A A A A W °C °C °C °C G = Gate, E = Emitter, Features C = Collector, TAB = Collector
G C (TAB)
GC E
TO-220AB (IXGP)
TO-263 AA (IXGA)
E
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g
· International standard packages
JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 750 ±100 1.8 2.0 V V µA µA nA V
· Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode · AC motor speed control · DC servo and robot drives · DC choppers
Advantages power supplies
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE TJ = 25°C TJ = 125°C
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
· High power density · Suitable for surface mounting
© 2002 IXYS All rights reserved
DS98977(12/02)
IXGA 7N60BD1 IXGP 7N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 7 500 VCE = 25 V, VGE = 0 V, f = 1 MHz 50 17 25 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 · VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 · VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG IGBT 0.50 15 10 10 10 100 150 0.3 10 15 0.15 200 250 0.6 1.56 200 250 0.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W
TO-263 AA Outline
Dim. A B C D E F G H J K M N Q R Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side
TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions I F = 10A; T VJ = 150°C T VJ = 25°C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.96 2.95 2 2.5 V V V
1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 5,486,715 5,381,025 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 6,306,728B1
V R = 100 V; I F =25A; -di F / d t = 100 A/µs L < 0.05 µH; T VJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C Diode
35
ns 1.6 K/W
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 5,187,117 5,237,481 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796
R 5,049,961 5,063,307
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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