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Part: IXGA7N60CD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Hiperfast (tm) Igbt With Diode Lightspeed(tm) Series
Company: IXYS Corporation
Datasheet: Download IXGA7N60CD1 datasheet File size : 67 kB
Request For quote: Find where to buy IXGA7N60CD1
Datasheet text preview:
HiPerFASTTM IGBT with Diode
IXGA 7 N 6 0 C D 1 IXGP 7 N 6 0 C D 1
LightspeedTM Series
Preliminary Data
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263 M3 M3.5 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ±20 ±30 14 7 30 ICM = 14 @ 0.8 VCES 75 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C
VCES IC25 VCE(sat)typ tfi
= 600 V = 14 A = 2.0 V = 45 n s
TO-220AB (IXGP)
GC E
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate, E = Emitter, Features
C = Collector, TAB = Collector
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g
· International standard packages
JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High frequency IGBT · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 750 ±100 2.0 2.5 V V µA µA nA V
· Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode · AC motor speed control · DC servo and robot drives · DC choppers
Advantages power supplies
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE TJ = 25°C TJ = 125°C
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
· High power density · Suitable for surface mounting · Very low switching losses for high
frequency applications
© 2003 IXYS All rights reserved
DS98720A(01/03)
IXGA 7N60CD1 IXGP 7N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 7 500 VCE = 25 V, VGE = 0 V, f = 1 MHz 50 17 25 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 · VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 · VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG IGBT 0.25 15 10 10 10 65 45 0.12 10 15 0.15 120 85 0.22 1.65 130 110 0.25 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W
TO-263 AA Outline
Dim. A B C D E F G H J K M N Q R Pins: 2 - Collector 4 - Collector Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 1 - Gate 3 - Emitter Bottom Side
TO-220 AB Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions I F = 10A; T VJ = 150°C T VJ = 25°C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.96 2.95 2 2.5 V V V
1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 5,486,715 5,381,025 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 6,306,728B1
V R = 100 V; I F =25A; -di F / d t = 100 A/µs L < 0.05 µH; T VJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C Diode
35
ns 1.6 K/W
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 5,187,117 5,237,481 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796
R 5,049,961 5,063,307
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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