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Part: IXGH12N100
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1000V Low Voltage High Speed Igbt
Company: IXYS Corporation
Datasheet: Download IXGH12N100 datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N100
Datasheet text preview:
Low VCE(sat) IGBT High Speed IGBT
VCES
IC 2 5
V CE(sat)
IXGH 12N100 IXGH 12N100A
1000 V 24 A 3.5 V 1000 V 24 A 4.0 V
Symbol V CES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. g °C
TO-247AD
G
C (TAB) C E C = Collector TAB = Collector
G = Gate E = Emitter
Mounting torque (M3)
1.13/10 6 300
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 1000 0.072 2.5 -0.192 250 1 ±100 12N100 12N100A 3.5 4.0 5.5 V %/K V %/K mA mA nA V V
B V CES
IC
= 3 mA, VGE = 0 V
Features · International standard package JEDEC TO-247 AD · 2nd generation HDMOSTM process · L o w V CE(sat) - for low on-state conduction losses · High current handling capability · MOS Gate turn-on - drive simplicity · Voltage rating guaranteed at high temperature (125°C) Applications · AC motor speed control · DC servo and robot drives · DC choppers · Uninterruptible power supplies (UPS) · Switch-mode and resonant-mode power supplies Advantages · Easy to mount with 1 screw (isolated mounting screw hole) · High power density
BVCES temperature coefficient V GE(th) IC = 500 mA, VGE = VGE VGE(th) temperature coefficient ICES I GES V CE(sat) VCE = 0.8 VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
95590B(7/00)
© 2000 IXYS All rights reserved
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IXGH12N100 IXGH12N100A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 6 10 750 VCE = 25 V, VGE = 0 V, f = 1 MHz 80 30 65 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 8 24 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH, VCE =. 0.8 VCES, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 12N100 12N100A 12N100 12N100A td(on) t ri Eon td(off) t fi Eoff RthJC RthCK Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 VCES, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 12N100 12N100A 12N100 12N100A 100 200 850 800 500 2.5 1.5 100 200 1.1 900 1250 950 3.5 2.2 0.25 3.0 1000 1000 700 90 20 45 S pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns mJ mJ 1.25 K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gfs C ies Coes Cres Qg Qge Qgc td(on) t ri td(off) t fi Eoff
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1 data sheet.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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