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Part: IXGH12N60BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT with FAST Diodes
Description:
Company: IXYS Corporation
Datasheet: Download IXGH12N60BD1 datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N60BD1
Datasheet text preview:
HiPerFASTTM IGBT
I X G H 12N60BD1
VD S S ID25
VCE(sat)
tfi(typ)
Preliminary data
= 600 V = 24 A = 2.1 V = 120 ns
Symbol VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 300 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Features · Moderate frequency IGBT · New generation HDMOSTM process · International standard package JEDEC TO-247 · High peak current handling capability and antiparallel diode in one package Applications · · · · PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ±100 2.1 V V mA mA nA V
BVCES VGE(th) ICES I GES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VGE = VGE
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98600B (7/00)
© 2000 IXYS All rights reserved
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IXGH 12N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 10 10 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 · VCES, RG = Roff = 18 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH VCE = 0.8 · VCES, RG = Roff = 18 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG IGBT 0.25 20 20 150 120 0.5 20 20 0.5 200 200 0.8 250 270 0.8 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 1.25 K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
Reverse Diode (FRED) Symbol VF Test Conditions I F = 15A; T VJ = 150°C T VJ = 25°C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.3 2.5 2 2.5 V V A
IRM t rr RthJC
V R = 100 V; I F =25A; -di F / d t = 100 A/ms L < 0.05 mH; T VJ = 100°C IF = 1 A; -di/dt = 50 A/ms; VR = 30 V TJ = 25°C Diode
35
ns 1.6 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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