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Part: IXGH12N60C
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Hiperfast (tm) Igbt Lightspeed(tm) Series
Company: IXYS Corporation
Datasheet: Download IXGH12N60C datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N60C
Datasheet text preview:
HiPerFASTTM IGBT LightspeedTM Series
I X G H 12N60C
VCES I C25 VCE(sat) tfi(typ)
= 600 V = 24 A = 2.7 V = 55 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 300 µH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 300 g °C
Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
· Very high frequency IGBT · New generation HDMOSTM process · International standard package
JEDEC TO-247
· High peak current handling capability
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ±100 2.1 2.7 V V µA mA nA V Applications
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VGE = VGE
· · · · ·
V C E = 0.8 VCES V GE = 0 V V C E = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers
Advantages
· Fast switching speed · High power density
© 2002 IXYS All rights reserved
98503B (2/02)
I X G H 12N60C
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 64 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG ° Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 10 10 20 20 60 55 0.09 20 20 0.15 85 85 0.27 180 180 0.60 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
A B C D E F G H J K L M N Dim. Millimeter Min. M a x . 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. M a x . 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0 .1 7 7 0.055 0.433 0.209 0.031 0.102
TO-247 AD (IXGH) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
1.25 K / W 0.25 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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