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Part: IXGH15N120B
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> High Voltage 1200 Volts <
Description: 1200V Hiperfast Igbt
Company: IXYS Corporation
Datasheet: Download IXGH15N120B datasheet File size : 548 kB
Request For quote: Find where to buy IXGH15N120B
Datasheet text preview:
HiPerFASTTM IGBT
I X G H 15N120B VCES I X G T 15N120B IC25 VCE(sat)
t fi(typ)
= 1200 = 30 = 3.2 = 160
V A V ns
Symbol V CES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 180 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W °C °C °C °C °C Features G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
· International standard packages JEDEC TO-268 surface a n d JEDEC TO-247 AD · Low switching losses, low V( s a t ) · MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 5 100 3.5 ±100 3.2 TJ = 125°C 2.5 V V µA mA nA V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
· · · · ·
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages · High power density · Suitable for surface mounting · Easy to mount with 1 screw, (isolated mounting screw hole)
© 2002 IXYS All rights reserved
98659-B (9/02)
IXGH IXGT
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 15 1720 VCE = 25 V, VGE = 0 V, f = 1 MHz 95 35 69 IC = IC110 , VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC110 , VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC110 , VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 13 26 25 15 180 160 1.75 25 18 0.60 300 360 3.5 280 320 S pF pF pF nC nC nC ns ns ns ns
Dim.
e
15N120B 15N120B
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC110 ; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
P
3.0 m J ns ns mJ ns ns mJ 0.65 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Min Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH IXGT
15N120B 15N120B
Fig. 1. Saturation Voltage Characteristics @ 25oC
50
TJ = 25OC
Fig. 2. Extended Output Characteristics
150 125
TJ = 25oC VGE = 15V
40
IC - Amperes
30 20 10
IC - Amperes
VGS = 15V 13V 11V
9V
100 75 50 25
13V 11V 9V 7V
7V
5V
5V
0
0
2
4
6
8
10
0
0
5
10
15
VCE - Volts
VCE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125oC
50
TJ = 125OC VGS = 15V 13V 11V
Fig. 4. Temperature Dependence of VCE(SAT)
1.6
VGE = 15V
VCE (SAT) - Normalized
40
1.4 1.2
IC = 30A
IC - Amperes
30 20 10
9V
IC = 15A
7V
1.0
IC = 7.5A
0.8 0.6 0.4
5V
0
0
2
4
6
8
10
-25
0
25
50
75
100 125 150
VCE - Volts
T J - Degrees C
Fig. 5. Admittance Curves
60 55 50 45 40 35 30 25 20 15 10 5 0
10000
TJ = 125 C
o
Fig. 6. Capacitance Curves
Ciss Capacitance - pF
1000
IC - Amperes
Coss
100
TJ = 25oC TJ = -40oC
Crss
8 9 10
10
4
5
6
7
0
5
10
15
20
25
30
35
40
VGE - Volts
VCE - Volts
© 2002 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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