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Part: IXGH15N120CD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> High Voltage 1200 Volts <
Description: 1200V Low Voltage Igbt With Diode
Company: IXYS Corporation
Datasheet: Download IXGH15N120CD1 datasheet File size : 548 kB
Request For quote: Find where to buy IXGH15N120CD1
Datasheet text preview:
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
VDSS IXGH/IXGT 15N120BD1 IXGH/IXGT 15N120CD1
IC 2 5
V CE(sat) 3.2 V 3.8 V
1200 V 30 A 1200 V 30 A
Preliminary data
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C °C g Features · International standard packages: JEDEC TO-247AD & TO-268 · IGBT and anti-parallel FRED in one package · MOS Gate turn-on - drive simplicity · Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C 2 ±100 15N120BD1 15N120CD1 3.2 3.8 5.0 500 V V mA mA nA V V · · · · · AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies G = Gate E = Emitter C = Collector TAB = Collector TO-268 (IXGT)
G E C (TAB) G C E TAB
TO-247AD (IXGH)
1.13/10 Nm/lb.in. 300 260 TO-247AD/TO-268 6/4
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 1 A, VGE = 0 V = 250 mA, VCE = VGE
VCE = VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Note 2
Advantages · Saves space (two devices in one package) · Easy to mount with 1 screw (isolated mounting screw hole) · Reduces assembly time and cost
IXYS reserves the right to change limits, test conditions, and dimensions.
98658A (7/00)
© 2000 IXYS All rights reserved
1-2
IXGH 15N120BD1 IXGH 15N120CD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 15 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 155 38 69 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 26 25 Inductive load, TJ = 25°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 W Note 1. 15N120BD1 15N120CD1 15N120BD1 15N120CD1 15 150 160 115 1.75 1.05 25 Inductive load, TJ = 125°C IC = IC90; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 W Note 1 18 1.5 270 15N120BD1 15N120CD1 15N120BD1 15N120CD1 360 250 3.5 2.1 0.25 280 320 190 3.0 1.6 S pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns mJ mJ mJ 0.83 K/W K/W
IXGT 15N120BD1 IXGT 15N120CD1
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Note 2.
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
TO-268AA (D3 PAK)
TO-247
Dim.
Reverse Diode (FRED) Symbol VF IF IRM t rr t rr RthJC Notes: 1. 2. Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.6 2.1 2.8 33 20 15 200 40 V V V V A ns ns 1.6 K/W
IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 20 A; -diF/dt = 400 A/ms, VR = 600 V VGE = 0 V; TJ = 125°C IF = 1 A; -diF/dt = 100 A/ms; VR = 30 V,VGE = 0 V
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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