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Part: IXGT20N100
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Medium Voltage 600-1199 Volts
Description: 1000V Igbt
Company: IXYS Corporation
Datasheet: Download IXGT20N100 datasheet File size : 538 kB
Request For quote: Find where to buy IXGT20N100
Datasheet text preview:
IGBT
I X G H 20N100 I X G T 20N100
VCES IC25 V CE(sat) tfi(typ)
= 1000 V = 40 A = 3.0 V = 280 ns
Preliminary data
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
G
TO-268 (IXGT)
G E (TAB)
TO-247 AD (IXGH)
W °C °C °C °C Features °C
G = Gate, E = Emitter,
C
E
C (TAB) C = Collector, TAB = Collector
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
· International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD · High current handling capability · MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 1 mA, VGE = 0 V = 250 mA, VCE = VGE
· · · · ·
5 250 1 ±100 2.2 3.0
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies · Capacitor discharge Advantages · High power density · Suitable for surface mounting · Easy to mount with 1 screw, (isolated mounting screw hole)
VCE = VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98620B (7/00)
© 2000 IXYS All rights reserved
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I X G H 20N100 I X G T 20N100
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 16 90 1750 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 38 73 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 26 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 47 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 47 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 30 30 350 280 3.5 30 30 0.65 700 520 6.5 700 700 8.0 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W (TO-247) 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s IC(ON) C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % VGE = 10V, VCE = 10V
1.5 2.49
TO-268AA (D3 PAK)
Min. Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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