|
|
Part: IXGT20N120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT High Speed
Description:
Company: IXYS Corporation
Datasheet: Download IXGT20N120 datasheet File size : 538 kB
Request For quote: Find where to buy IXGT20N120
Datasheet text preview:
IGBT
Preliminary Data Sheet
I X G H 20N120 VCES I X G T 20N120 IC25 VCE(sat) tfi(typ)
= 1200 V = 40 A = 2.5 V = 380 ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 47 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 260 W °C °C °C °C °C Features V V V V A A A A
G E C (TAB) G DS
TO-247 (IXGH)
TO-268 (IXGT)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md Weight Mounting torque (TO-247) TO-247 TO-268
·International
standard packages
1.13/10 Nm/lb.in. 6 5 g g
JEDEC TO-247 and TO-268 ·High current handling capability
·MOS Gate turn-on
- drive simplicity Applications
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IC = 1 mA, VGE = 0 V IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Min. 1200 2.5 TJ = 25°C TJ = 125°C
Characteristic Values Typ. Max. V 5.0 250 1 ±100 2.0 2.5 V µA mA nA V
· AC motor speed control · DC servo and robot drives · DC choppers · Uninterruptible power supplies (UPS) · Switch-mode and resonant-mode
power supplies · Capacitor discharge Advantages
· Easy to mount with one screw · Reduces assembly time and cost · High power density
© 2002 IXYS All rights reserved
DS98966 (11/02)
IXGH 20N120 IXGT 20N120
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Cies Coes Cres IC(ON) Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-247 0.25 Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 800 V, RG = Roff = 47 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VGE = 10V, VCE = 10V VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % 1750 90 31 90 63 13 26 28 20 400 380 6.5 30 27 0.90 700 550 9.5 0.83 800 700 10.5 pF pF pF A nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W
Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
Characteristic Values Min. Typ. Max. 12 16 S
TO-247 TO-247 Outline
TO-268 Outline
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
|
|
|
