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Part: IXGT20N120BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT with FAST Diodes
Description:
Company: IXYS Corporation
Datasheet: Download IXGT20N120BD1 datasheet File size : 538 kB
Request For quote: Find where to buy IXGT20N120BD1
Datasheet text preview:
High Voltage IGBT with Diode IXGH 2 0 N 1 2 0 B D 1 IXGT 2 0 N 1 2 0 B D 1
Preliminary Data Sheet
VCES IC25 VCE(sat)
t fi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
Symbol V CES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247AD (IXGH)
G
C
TAB E
TO-268 (IXGT)
G E C (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Mounting torque
(TO-247)
1.13/10 Nm/lb.in. 300 260 °C °C g
Features
I
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature soldering SMD devices for 10s Weight TO-247AD/TO-268
6/4
nternational standard packages: JEDEC TO-247AD & TO-268 I GBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers M OS Gate turn-on - drive simplicity F ast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages
S
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C 50 ±100 TJ= 1 2 5° C 2.9 2.8 3.4 5.0 150 V V µA µA nA V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 1 µA, VGE = 0 V = 250 µA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V Note 2
aves space (two devices in one package) E asy to mount with 1 screw (isolated mounting screw hole) R educes assembly time and cost
© 2003 IXYS All rights reserved
DS98985C(05/03)
IXGH 20N120BD1 IXGT 20N120BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 18 1700 VCE = 25 V, VGE = 0 V, f = 1 MHz 105 39 72 IC = 20A, VGE = 15 V, VCE = 0.5 VCES ° Inductive load, TJ = 25°C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1. 12 27 25 15 150 160 2.1 25 18 1.9 270 360 3.5 (TO-247) 0.25 280 S pF pF pF nC nC nC ns ns ns 320 n s 3.5 m J ns ns mJ ns ns mJ 0.65 K/W K/W TO-268 Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 20A; VCE = 10 V, Note 2.
Inductive load, TJ = 125°C ° IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1
Reverse Diode (FRED) Symbol VF IF IRM t rr t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.95 2.0 10 14 120 40 V V A A ns ns 2.5 K/W
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V, TJ = 125°C TC = 90°C IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V; TJ = 125°C IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
Notes:
1. 2.
Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 20N120BD1 IXGT 20N120BD1
Fig. 1. Output Characteristics @ 25 Deg. C
40 35 30 VG E = 15V 13V 11V 10 6 10 4 9V 10 2
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 1V 3 11 V
I C - Amperes
25 20 1 5 1 0 5 0 1 15 . 2 2.5 3 3.5 4 4.5 5 5V 7V
I C - Amperes
10 0 80 60 40 20 0 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 7V 9V
5V
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
40 35 30 VG E = 15V 13V 11V 9V
Fi g. 4. Temperature Dependence of V CE(s at)
14 . 13 . VG E = 15V I C = 40A
VCE (sat) - Normalized
I C - Amperes
25 20 1 5 1 0 5 0 0.5 1 15 . 2 2.5 3 3.5 4 4.5 5 5V 7V
12 . 11 . 1 I C = 20A 0.9 0.8 0.7 -50 -25 0 25 50 75 10 0 15 2 10 5 I C = 10A
V CE - Volts
TJ - Degrees Centigrade
Fi g. 5. Input Admittance
80 70 60 27 24 21
Fi g. 6. Transconductance
T J = -40ºC 25ºC 125ºC
I C - Amperes
G f s - Siemens
5 6 7 8 9 1 0
50 40 30 20 1 0 0 3 4 T J = -40ºC 25ºC 125ºC
1 8 1 5 1 2 9 6 3 0 0 1 0 20 30 40 50 60 70 80
V GE - Volts
I C - Amperes
© 2003 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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