|
|
Part: IXGT20N60BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Hiperfast (tm) Igbt With Diode
Company: IXYS Corporation
Datasheet: Download IXGT20N60BD1 datasheet File size : 538 kB
Request For quote: Find where to buy IXGT20N60BD1
Datasheet text preview:
HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V ns
Preliminary data
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 20 80 ICM = 40 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C
E C = Collector, TAB = Collector
C (TAB)
G = Gate, E = Emitter,
Features · International standard packages · High frequency IGBT and antiparallel FRED in one package · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on -drive simplicity Applications · Uninterruptible power supplies (UPS) · Switched-mode and resonant-mode power supplies · AC motor speed control · DC servo and robot drives · DC choppers Advantages · Space savings (two devices in one package) · High power density · Suitable for surface mounting · Very low switching losses for high frequency applications · Easy to mount with 1 screw,TO-247 (insulated mounting screw hole)
Mounting torque (M3) TO-247AD
1.13/10 Nm/lb.in. 300 6 4
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.5 200 3 ±100 1.7 2.0 V V mA mA nA V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98566A (3/99)
© 2000 IXYS All rights reserved
1-2
IXGH 20N60BD1 IXGT 20N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9 17 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 150 40 55 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 12 20 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 15 25 110 100 0.7 15 35 0.75 220 140 1.2 200 150 1.0 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ TO-268AA (D3 PAK) 0.83 K/W TO-247 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.6 2.5 6 100 25 V V A ns ns 1.0 K/W Min. Recommended Footprint
IF = 30A, VGE = 0 V, TJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C IF = 30A, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =100°C TJ = 25°C
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
|
|
|
