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Part: IXGT28N120B
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT High Speed
Description:
Company: IXYS Corporation
Datasheet: Download IXGT28N120B datasheet File size : 146 kB
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Datasheet text preview:
High Voltage IGBT
Preliminary Data Sheet
I X G H 28N120B VCES = 1200 V = 50 A I X G T 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns
Symbol V CES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 50 28 150 ICM = 60 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W °C °C °C °C °C G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C 5 50 ±100 TJ = 125°C 2.9 2.8 3.5 V V µA nA V V
Features H igh Voltage IGBT for resonant power supplies - Induction heating - Rice cookers I nternational standard packages JEDEC TO-268 a n d JEDEC TO-247 AD L ow switching losses, low V( s a t ) M OS Gate turn-on - drive simplicity Advantages
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA , VGE = 0 V = 250 µA, VCE = VGE
H S
VCE = VCES, VGE= 0 V VCE = 0 V, VGE = ±20 V IC = 28A, VGE = 15 V
igh power density uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS98987C(05/03)
I X G H 28N120B I X G T 28N120B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 20 30 2700 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 60 112 IC = 28A, VGE = 15 V, VCE = 0.5 VCES 17 37 30 Inductive load, TJ = 25°C ° IC = 28 A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 20 180 160 2.8 35 28 Inductive load, TJ = 125°C ° IC = 28A, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 1.4 250 300 5.0 280 320 S pF pF pF nC nC nC ns ns ns ns
Dim.
e P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 28A; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
5.0 m J ns ns mJ ns ns mJ 0.5 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
I X G H 28N120B I X G T 28N120B
Fig. 1. Output Characteristics @ 25 Deg. C
56 49 42 VG E = 15V 13V 11V 9V 21 0 10 8 10 5 10 2 9V 90 60 7V 30 0 1 15 . 2 2.5 3 3.5 4 4.5 5 0 3 6 9 1 2 1 5 1 8 5V
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11 V
I C - Amperes
35 28 21 1 4 7 0 5V 7V
I C - Amperes
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
56 49 42 VG E = 15V 13V 11V 9V 7V
Fig. 4. Temperature Dependence of V CE(s at)
14 . 13 . VG E = 15V I C = 56A
VC E (sat) - Normalized
12 . 11 . 1 0.9 0.8 0.7 0.6 I C = 14A I C = 28A
I C - Amperes
35 28 21 1 4 7 0 0.5 1 15 . 2 2.5 3 3.5 4 4.5 5 5V
V CE - Volts
-50
-25
0
25
50
75
10 0
15 2
10 5
TJ - Degrees Centigrade
Fig. 5. Input Admittance
98 84 45 40 35
Fig. 6. Transconductance
T J = -40ºC 25ºC 125ºC
G f s - Siemens
5.5 6 6.5 7 7.5 8
I C - Amperes
70 56 42 28 1 4 0 4 4.5 5 T J = -40ºC 25ºC 125ºC
30 25 20 1 5 1 0 5 0 0 1 4 28 42 56 70 84 98
V GE - Volts
I C - Amperes
© 2003 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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