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Part: IXGT28N60BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Low V Ce(sat) Igbt With Diode
Company: IXYS Corporation
Datasheet: Download IXGT28N60BD1 datasheet File size : 146 kB
Request For quote: Find where to buy IXGT28N60BD1
Datasheet text preview:
Low VCE(sat) IGBT with Diode
IXGH 28N60BD1 IXGT 28N60BD1
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data
Symbol VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g Features · International standard packages · IGBT and anti-parallel FRED in one package · Low VCE(sat) - for minimum on-state conduction losses · MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 200 3 ±100 2.0 V V mA mA nA V · · · · · AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
G = Gate, E = Emitter, C = Collector, TAB = Collector G C E TAB
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
1.13/10 Nm/lb.in. 300 6 4
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 750 mA, VGE = 0 V = 250 mA, VCE = VGE
Advantages · Space savings (two devices in one package) · Easy to mount with 1 screw (isolated mounting screw hole) · Reduces assembly time and cost · High power density
VCE = 0.8 · VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98567A (7/00)
© 2000 IXYS All rights reserved
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IXGH 28N60BD1 IXGT 28N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9 14 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 170 40 80 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 15 30 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 15 25 200 200 3 15 25 1 400 400 6 400 400 6 100 30 40 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.83 K/W TO-247 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes C res Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
TO-268AA (D3 PAK)
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.6 2.5 6 100 25 V V A ns ns
Dim.
IF = IC90, VGE = 0 V, TJ = 150°C Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 100 V IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 100°C TJ = 25°C
1 K/W Min. Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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