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Part: IXGT32N170

Category:
 Discrete
   -> IGBTs (Insulated Gate Bipolar Transistors)
     -> NPT IGBT

Description:

Company: IXYS Corporation

Datasheet: Download IXGT32N170 datasheet     File size : 168 kB

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Datasheet text preview:
Advance Technical Data
High Voltage IGBT
I X G H 32N170 VCES I X G T 32N170 IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.3 V = 290 ns
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W °C °C °C °C °C
G = Gate, E = Emitter,
Features nternational standard packages JEDEC TO-268 a n d JEDEC TO-247 AD H igh current handling capability M OS Gate turn-on - drive simplicity R ugged NPT structure M olding epoxies meet UL 94 V-0 flammability classification Applications
C I
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25°C TJ = 125°C 5.0 50 1 ±100 TJ = 25°C TJ = 125°C 2.5 3.0 3.3 V V µA mA nA V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
apacitor discharge & pulser circuits C motor speed control D C servo and robot drives D C choppers U ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies
A
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages
H S
igh power density uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
© 2003 IXYS All rights reserved
98941A(01/03)
I X G H 32N170 I X G T 32N170
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 25 33 130 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 165 40 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 30 51 45 38 270 250 15 48 42 6.0 360 560 22 500 500 S A pF pF pF nC nC nC ns ns ns ns
Dim.
e P
TO-247 AD Outline
gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC25; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % VGE = 10V, VCE = 10V
25 m J ns ns mJ ns ns mJ 0.35 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1


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