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Part: IXGT32N170A
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> NPT IGBT
Description:
Company: IXYS Corporation
Datasheet: Download IXGT32N170A datasheet File size : 168 kB
Request For quote: Find where to buy IXGT32N170A
Datasheet text preview:
Advance Technical Information
High Voltage IGBT
I X G H 32N170A I X G T 32N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 32 A = 5.0 V = 50 ns
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10 TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 32 21 110 ICM = 70 @ 0.8 VCES 10 350 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
µs W °C °C °C
G = Gate, E = Emitter,
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in. 300 °C 6 4 g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Features I nternational standard packages JEDEC TO-268 a n d JEDEC TO-247 AD H igh current handling capability M OS Gate turn-on - drive simplicity R ugged NPT structure M olding epoxies meet UL 94 V-0 flammability classification Applications C apacitor discharge & pulser circuits A C motor speed control D C servo and robot drives D C choppers U ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies Advantages H igh power density S uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 25°C TJ = 125°C 5.0 50 2 ±100 TJ = 25°C TJ = 125°C 4.0 4.8 5.0 V V µA mA nA V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
© 2003 IXYS All rights reserved
DS98942A(01/03)
I X G H 32N170A I X G T 32N170A
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 16 23 3500 VCE = 25 V, VGE = 0 V, f = 1 MHz 160 40 155 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC25, VGE = 15 V RG = 2.7 , VCE = 0.5 VCES Note 3 30 51 46 57 260 50 2.5 Inductive load, TJ = 125°C ° IC = IC25, VGE = 15 V RG = 2.7 , VCE = 0.5 VCES Note 3 48 59 4.0 300 70 3.0 500 100 S pF pF pF nC nC nC ns ns ns ns
Dim.
e P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC25; VCE = 10 V Note 2
4.2 m J ns ns mJ ns ns mJ 0.35 K/W K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
Notes: 1. 2. 3.
Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 µs, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG.
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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